Inventor
LIU HAITAO
CN311 patents
⚠️ This page may combine multiple inventors who share the name “LIU HAITAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
30 patentsUS9741737B1Aug 22, 2017
Integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material
MICRON TECHNOLOGY INC105 citations99
US9728266B1Aug 8, 2017
Memory device including multiple select gates and different bias conditions
MICRON TECHNOLOGY INC38 citations98
US9305929B1Apr 5, 2016
Memory cells
MICRON TECHNOLOGY INC60 citations98
US9773888B2Sep 26, 2017
Vertical access devices, semiconductor device structures, and related methods
MICRON TECHNOLOGY INC30 citations94
US10418379B2Sep 17, 2019
Integrated structures comprising channel material extending into source material
MICRON TECHNOLOGY INC12 citations93
US9941298B2Apr 10, 2018
Methods of forming integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material
MICRON TECHNOLOGY INC14 citations93
US9536618B2Jan 3, 2017
Apparatuses and methods to control body potential in memory operations
MICRON TECHNOLOGY INC22 citations93
US7626866B2Dec 1, 2009
NAND flash memory programming
MICRON TECHNOLOGY INC22 citations93
US9437604B2Sep 6, 2016
Methods and apparatuses having strings of memory cells including a metal source
MICRON TECHNOLOGY INC21 citations92
US9064577B2Jun 23, 2015
Apparatuses and methods to control body potential in memory operations
MICRON TECHNOLOGY INC22 citations92
US11563022B2Jan 24, 2023
Memory arrays and methods used in forming a memory array comprising strings of memory cells
MICRON TECHNOLOGY INC6 citations86
US11476252B2Oct 18, 2022
Memory device having 2-transistor vertical memory cell and shared channel region
MICRON TECHNOLOGY INC7 citations86
US11362175B1Jun 14, 2022
Select gate gate-induced-drain-leakage enhancement
MICRON TECHNOLOGY INC8 citations86
US11335684B2May 17, 2022
Memory device having 2-transistor memory cell and access line plate
MICRON TECHNOLOGY INC9 citations86
US11164872B1Nov 2, 2021
Underbody contact to horizontal access devices for vertical three-dimensional (3D) memory
MICRON TECHNOLOGY INC14 citations86
US10943953B2Mar 9, 2021
Semiconductor devices, hybrid transistors, and related methods
MICRON TECHNOLOGY INC9 citations86
US10937482B2Mar 2, 2021
Memory cells and arrays of elevationally-extending strings of memory cells
MICRON TECHNOLOGY INC10 citations86
US10748931B2Aug 18, 2020
Integrated assemblies having ferroelectric transistors with body regions coupled to carrier reservoirs
MICRON TECHNOLOGY INC11 citations86
US10608012B2Mar 31, 2020
Memory devices including memory cells and related methods
MICRON TECHNOLOGY INC8 citations84
US10217753B2Feb 26, 2019
Memory cells
MICRON TECHNOLOGY INC3 citations84
US10170196B2Jan 1, 2019
Apparatuses and methods to control body potential in 3D non-volatile memory operations
MICRON TECHNOLOGY INC4 citations84
US10026480B2Jul 17, 2018
Memory device including multiple select gates and different bias conditions
MICRON TECHNOLOGY INC4 citations84
US9953710B2Apr 24, 2018
Memory devices with a connecting region having a band gap lower than a band gap of a body region
MICRON TECHNOLOGY INC4 citations84
US9887204B2Feb 6, 2018
Memory cells
MICRON TECHNOLOGY INC4 citations84
US9881686B2Jan 30, 2018
Apparatuses and methods to control body potential in 3D non-volatile memory operations
MICRON TECHNOLOGY INC6 citations84
US9761590B1Sep 12, 2017
Passing access line structure in a memory device
MICRON TECHNOLOGY INC8 citations84
US9673203B2Jun 6, 2017
Memory cells
MICRON TECHNOLOGY INC7 citations84
US8766320B2Jul 1, 2014
Memory devices with a connecting region having a band gap lower than a band gap of a body region
MICRON TECHNOLOGY INC7 citations84
US9761599B2Sep 12, 2017
Integrated structures containing vertically-stacked memory cells
MICRON TECHNOLOGY INC9 citations80
US12266660B2Apr 1, 2025
Memory device having 2-transistor memory cell and access line plate
MICRON TECHNOLOGY INC3 citations75
INTEL CORP
4 patentsUS9412821B2Aug 9, 2016
Stacked thin channels for boost and leakage improvement
INTEL CORP15 citations91
US9209199B2Dec 8, 2015
Stacked thin channels for boost and leakage improvement
INTEL CORP25 citations91
US9281318B2Mar 8, 2016
Three dimensional memory structure
INTEL CORP6 citations84
US9129859B2Sep 8, 2015
Three dimensional memory structure
INTEL CORP12 citations84
CHINA PETROLEUM & CHEMICAL
3 patentsUS7388061B2Jun 17, 2008
Solid catalyst component for polymerization of olefins, catalyst comprising the same and use thereof
CHINA PETROLEUM & CHEMICAL105 citations97
US7351778B2Apr 1, 2008
Catalyst component for olefin polymerization and catalyst comprising the same
CHINA PETROLEUM & CHEMICAL37 citations89
US7399812B2Jul 15, 2008
Silicon ether compounds and a method for the preparation thereof
CHINA PETROLEUM & CHEMICAL10 citations81
LIU HAITAO
2 patentsKOH WEI-HU
2 patentsTANG SANH D
2 patentsLOH TIAN HONG
1 patentZAHURAK JOHN K
1 patentGAINTEAM HOLDINGS LTD
1 patentARITOME SEIICHI
1 patentFOSHAN SHUNDE ZHANKE TRADING CO LTD
1 patentSONG YUE
1 patentGODA AKIRA
1 patentShowing the top 50 of 311 patents by PatentIndex Score.