P

Inventor

LIU HAITAO

CN311 patents
⚠️ This page may combine multiple inventors who share the name “LIU HAITAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

30 patents
US9741737B1Aug 22, 2017

Integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material

MICRON TECHNOLOGY INC105 citations99
US9728266B1Aug 8, 2017

Memory device including multiple select gates and different bias conditions

MICRON TECHNOLOGY INC38 citations98
US9305929B1Apr 5, 2016

Memory cells

MICRON TECHNOLOGY INC60 citations98
US9773888B2Sep 26, 2017

Vertical access devices, semiconductor device structures, and related methods

MICRON TECHNOLOGY INC30 citations94
US10418379B2Sep 17, 2019

Integrated structures comprising channel material extending into source material

MICRON TECHNOLOGY INC12 citations93
US9941298B2Apr 10, 2018

Methods of forming integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material

MICRON TECHNOLOGY INC14 citations93
US9536618B2Jan 3, 2017

Apparatuses and methods to control body potential in memory operations

MICRON TECHNOLOGY INC22 citations93
US7626866B2Dec 1, 2009

NAND flash memory programming

MICRON TECHNOLOGY INC22 citations93
US9437604B2Sep 6, 2016

Methods and apparatuses having strings of memory cells including a metal source

MICRON TECHNOLOGY INC21 citations92
US9064577B2Jun 23, 2015

Apparatuses and methods to control body potential in memory operations

MICRON TECHNOLOGY INC22 citations92
US11563022B2Jan 24, 2023

Memory arrays and methods used in forming a memory array comprising strings of memory cells

MICRON TECHNOLOGY INC6 citations86
US11476252B2Oct 18, 2022

Memory device having 2-transistor vertical memory cell and shared channel region

MICRON TECHNOLOGY INC7 citations86
US11362175B1Jun 14, 2022

Select gate gate-induced-drain-leakage enhancement

MICRON TECHNOLOGY INC8 citations86
US11335684B2May 17, 2022

Memory device having 2-transistor memory cell and access line plate

MICRON TECHNOLOGY INC9 citations86
US11164872B1Nov 2, 2021

Underbody contact to horizontal access devices for vertical three-dimensional (3D) memory

MICRON TECHNOLOGY INC14 citations86
US10943953B2Mar 9, 2021

Semiconductor devices, hybrid transistors, and related methods

MICRON TECHNOLOGY INC9 citations86
US10937482B2Mar 2, 2021

Memory cells and arrays of elevationally-extending strings of memory cells

MICRON TECHNOLOGY INC10 citations86
US10748931B2Aug 18, 2020

Integrated assemblies having ferroelectric transistors with body regions coupled to carrier reservoirs

MICRON TECHNOLOGY INC11 citations86
US10608012B2Mar 31, 2020

Memory devices including memory cells and related methods

MICRON TECHNOLOGY INC8 citations84
US10217753B2Feb 26, 2019

Memory cells

MICRON TECHNOLOGY INC3 citations84
US10170196B2Jan 1, 2019

Apparatuses and methods to control body potential in 3D non-volatile memory operations

MICRON TECHNOLOGY INC4 citations84
US10026480B2Jul 17, 2018

Memory device including multiple select gates and different bias conditions

MICRON TECHNOLOGY INC4 citations84
US9953710B2Apr 24, 2018

Memory devices with a connecting region having a band gap lower than a band gap of a body region

MICRON TECHNOLOGY INC4 citations84
US9887204B2Feb 6, 2018

Memory cells

MICRON TECHNOLOGY INC4 citations84
US9881686B2Jan 30, 2018

Apparatuses and methods to control body potential in 3D non-volatile memory operations

MICRON TECHNOLOGY INC6 citations84
US9761590B1Sep 12, 2017

Passing access line structure in a memory device

MICRON TECHNOLOGY INC8 citations84
US9673203B2Jun 6, 2017

Memory cells

MICRON TECHNOLOGY INC7 citations84
US8766320B2Jul 1, 2014

Memory devices with a connecting region having a band gap lower than a band gap of a body region

MICRON TECHNOLOGY INC7 citations84
US9761599B2Sep 12, 2017

Integrated structures containing vertically-stacked memory cells

MICRON TECHNOLOGY INC9 citations80
US12266660B2Apr 1, 2025

Memory device having 2-transistor memory cell and access line plate

MICRON TECHNOLOGY INC3 citations75

INTEL CORP

4 patents

CHINA PETROLEUM & CHEMICAL

3 patents

LIU HAITAO

2 patents

KOH WEI-HU

2 patents

TANG SANH D

2 patents

LOH TIAN HONG

1 patent

ZAHURAK JOHN K

1 patent

GAINTEAM HOLDINGS LTD

1 patent

ARITOME SEIICHI

1 patent

FOSHAN SHUNDE ZHANKE TRADING CO LTD

1 patent

SONG YUE

1 patent

GODA AKIRA

1 patent

Showing the top 50 of 311 patents by PatentIndex Score.