Inventor · disambiguated record
Jin Seop Shim
Also filed as: SHIM JIN-SEOP
10 granted patents·189 citations·filing 1995–2014
90Inventor score
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10 records- 0187US9431389B2ESD transistor for high voltage and ESD protection circuit thereofMAGNACHIP SEMICONDUCTOR LTD·Filed 2014·Granted Aug 30, 2016·9 cites·27 claims
- 0285US6570201B2CMOS image sensor capable of increasing punch-through voltage and charge integration of photodiodeHYNIX SEMICONDUCTOR INC·Filed 2001·Granted May 27, 2003·35 cites·2 claims
- 0380US5677200AColor charge-coupled device and method of manufacturing the sameLG SEMICON CO LTD·Filed 1995·Granted Oct 14, 1997·66 cites·14 claims
- 0479US6767312B2CMOS image sensor capable of increasing punch-through voltage and charge integration of photodiode, and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Jul 27, 2004·23 cites·8 claims
- 0569US5900655ACharge coupled device with stripe layers corresponding to CCD regionsLG SEMICON CO LTD·Filed 1997·Granted May 4, 1999·32 cites·9 claims
- 0658US6627929B2Solid state CCD image sensor having a light shielding layerLG SEMICON CO LTD·Filed 2001·Granted Sep 30, 2003·6 cites·6 claims
- 0737US5895943AColor charge-coupled deviceLG SEMICON CO LTD·Filed 1997·Granted Apr 20, 1999·7 cites·3 claims
- 0836US6093582AMethod of forming a charge coupled device with stripe layers corresponding to CCD regionsLG SEMICON CO LTD·Filed 1998·Granted Jul 25, 2000·5 cites·14 claims
- 0936US5959318ASolid state image pickup device with polygatesLG SEMICON CO LTD·Filed 1997·Granted Sep 28, 1999·6 cites·18 claims
- 1029US6300157B1Solid state image sensor and method for fabricating the sameLG SEMICON CO LTD·Filed 1998·Granted Oct 9, 2001·0 cites·7 claims
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