Inventor
OH SEUNGHO
KR25 patents
⚠️ This page may combine multiple inventors who share the name “OH SEUNGHO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LG ELECTRONICS INC
15 patentsUSD836860SDec 25, 2018
Washing machine
LG ELECTRONICS INC26 citations94
USD771330SNov 8, 2016
Washing machine
LG ELECTRONICS INC33 citations94
USD770706SNov 1, 2016
Washing machine
LG ELECTRONICS INC34 citations94
USD770707SNov 1, 2016
Washing machine
LG ELECTRONICS INC32 citations94
USD770103SOct 25, 2016
Washing machine
LG ELECTRONICS INC27 citations94
USD773132SNov 29, 2016
Washing machine
LG ELECTRONICS INC22 citations93
USD773133SNov 29, 2016
Washing machine
LG ELECTRONICS INC22 citations93
USD767835SSep 27, 2016
Door for washing machine
LG ELECTRONICS INC18 citations93
USD838063SJan 8, 2019
Washing machine
LG ELECTRONICS INC7 citations84
USD796130SAug 29, 2017
Door for washing machine
LG ELECTRONICS INC13 citations84
USD796131SAug 29, 2017
Door for washing machine
LG ELECTRONICS INC7 citations84
USD772509SNov 22, 2016
Washing machine
LG ELECTRONICS INC10 citations84
USD767836SSep 27, 2016
Washing machine
LG ELECTRONICS INC9 citations84
USD794882SAug 15, 2017
Door for washing machine
LG ELECTRONICS INC2 citations73
USD767221SSep 20, 2016
Washing machine
LG ELECTRONICS INC2 citations63
TOKYO ELECTRON LTD
8 patentsUS7205187B2Apr 17, 2007
Micro-feature fill process and apparatus using hexachlorodisilane or other chlorine-containing silicon precursor
TOKYO ELECTRON LTD60 citations97
US7737051B2Jun 15, 2010
Silicon germanium surface layer for high-k dielectric integration
TOKYO ELECTRON LTD8 citations83
US7468311B2Dec 23, 2008
Deposition of silicon-containing films from hexachlorodisilane
TOKYO ELECTRON LTD17 citations83
US6110286AAug 29, 2000
Vertical processing unit
TOKYO ELECTRON LTD8 citations74
US7501349B2Mar 10, 2009
Sequential oxide removal using fluorine and hydrogen
TOKYO ELECTRON LTD5 citations62
US7358194B2Apr 15, 2008
Sequential deposition process for forming Si-containing films
TOKYO ELECTRON LTD5 citations62
US7524769B2Apr 28, 2009
Method and system for removing an oxide from a substrate
TOKYO ELECTRON LTD0 citations51
US7405140B2Jul 29, 2008
Low temperature formation of patterned epitaxial Si containing films
TOKYO ELECTRON LTD1 citations51