Inventor · disambiguated record
Chyi-Chyuan Huang
Also filed as: HUANG CHYI-CHYUAN
7 granted patents·53 citations·filing 2006–2012
85Inventor score
Top patents by PatentIndex Score
7 records- 0188US7960786B2Breakdown voltages of ultra-high voltage devices by forming tunnelsTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Jun 14, 2011·17 cites·20 claims
- 0286US8389341B2Lateral power MOSFET with high breakdown voltage and low on-resistanceHUANG TSUNG-YI·Filed 2011·Granted Mar 5, 2013·8 cites·14 claims
- 0383US7768071B2Stabilizing breakdown voltages by forming tunnels for ultra-high voltage devicesTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Aug 3, 2010·9 cites·19 claims
- 0477US8669150B2Semiconductor device with reliable high-voltage gate oxide and method of manufacture thereofTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Mar 11, 2014·4 cites·20 claims
- 0577US7989890B2Lateral power MOSFET with high breakdown voltage and low on-resistanceTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Aug 2, 2011·6 cites·19 claims
- 0673US7960810B2Semiconductor device with reliable high-voltage gate oxide and method of manufacture thereofTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jun 14, 2011·5 cites·19 claims
- 0771US8338243B2Semiconductor device with reliable high-voltage gate oxide and method of manufacture thereofHUANG CHYI-CHYUAN·Filed 2011·Granted Dec 25, 2012·4 cites·19 claims
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