Inventor

KONRATH JENS PETER

AT47 patents

⚠️ This page may combine multiple inventors who share the name “KONRATH JENS PETER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KONRATH JENS PETER

INFINEON TECHNOLOGIES AG

Semiconductor devices and a circuit for controlling a field effect transistor of a semiconductor device

Method for reducing bipolar degradation in an SIC semiconductor device and semiconductor device

Processing a semiconductor wafer

Schottky diode with reduced forward voltage

Semiconductor device including silicon carbide body and method of manufacturing

Semiconductor device, a power semiconductor device, and a method for processing a semiconductor device

Semiconductor device and method for producing the same

Semiconductor device and corresponding manufacturing method

Forming silicon oxide layers by radical oxidation and semiconductor device with silicon oxide layer

Silicon carbide device with trench gate

Preliminary trenches formed in kerf regions for die singulation

Semiconductor device having a silicon carbide drift zone over a silicon carbide field stop zone

Method of manufacturing a semiconductor device and semiconductor device

Semiconductor device including junction material in a trench and manufacturing method

Semiconductor devices and methods for forming semiconductor devices

Method of manufacturing a semiconductor device

Silicon carbide device with a stripe-shaped trench gate structure

Method of producing a silicon carbide device with a trench gate

Silicon carbide device with Schottky contact

Semiconductor device with a passivation layer and method for producing thereof

Semiconductor device and method for forming a semiconductor device

Semiconductor device and method for forming a semiconductor device

Semiconductor device with a passivation layer and method for producing thereof

Semiconductor device including a passivation structure and manufacturing method

Semiconductor devices and a method for forming a semiconductor device

Semiconductor substrate arrangements and a method for forming a semiconductor substrate arrangement

Semiconductor device and a method for forming a semiconductor device

Method for manufacturing a semiconductor device comprising a metal nitride layer and semiconductor device

Semiconductor device having a metal-semiconductor junction and manufacturing therefor

JFET and method of manufacturing thereof

Junction field effect transistor cell with lateral channel region

Semiconductor device with bipolar junction transistor cells

Junction field effect transistor cell with lateral channel region

Method of manufacturing a vertical semiconductor device

Vertical semiconductor device and method of manufacturing thereof

Semiconductor device having a barrier layer made of amorphous molybdenum nitride and method for producing such a semiconductor device

Method for processing an electronic component and an electronic component

Method for processing an electronic component and an electronic component

Forming a contact layer on a semiconductor body

Semiconductor component having a doped substrate layer and corresponding methods of manufacturing

Methods for forming a plurality of semiconductor devices on a plurality of semiconductor wafers

Semiconductor device and method for producing the same

INFINEON TECHNOLOGIES AUSTRIA AG

Semiconductor device

Method for manufacturing a semiconductor device having a Schottky contact

Semiconductor device with non-ohmic contact between SiC and a contact layer containing metal nitride

Methods for manufacturing a semiconductor device having a non-ohmic contact formed between a semiconductor material and an electrically conductive contact layer

INFINEON TECHNOLOGIES AUSTRIA

Method for producing semiconductor regions including impurities