P

Inventor

CHUNG CHIU-HUA

TW19 patents
⚠️ This page may combine multiple inventors who share the name “CHUNG CHIU-HUA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

17 patents
US9680009B2Jun 13, 2017

High voltage semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US11415878B2Aug 16, 2022

Pellicle frame with stress relief trenches

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11145709B2Oct 12, 2021

Semiconductor device including a capacitor

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations71
US12130551B2Oct 29, 2024

Pellicle frame with stress relief trenches

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11923425B2Mar 5, 2024

Shielding structure for ultra-high voltage semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11726401B2Aug 15, 2023

Pellicle frame with stress relief trenches

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11588028B2Feb 21, 2023

Shielding structure for ultra-high voltage semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US10879236B2Dec 29, 2020

Bootstrap metal-oxide-semiconductor (MOS) device integrated with a high voltage MOS (HVMOS) device and a high voltage junction termination (HVJT) device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12062687B2Aug 13, 2024

Semiconductor device including a capacitor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11728374B2Aug 15, 2023

Semiconductor device including a capacitor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11688804B2Jun 27, 2023

Semiconductor device with ring-shaped doped region and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12074162B2Aug 27, 2024

Structure and formation method of semiconductor device with capacitors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12062686B2Aug 13, 2024

Structure and formation method of semiconductor device with capacitors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US10679987B2Jun 9, 2020

Bootstrap metal-oxide-semiconductor (MOS) device integrated with a high voltage MOS (HVMOS) device and a high voltage junction termination (HVJT) device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US10748986B2Aug 18, 2020

Structure and formation method of semiconductor device with capacitors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US10866276B2Dec 15, 2020

Method and system for aligning probe card in semiconductor device testing

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations40
US10509071B2Dec 17, 2019

Method and system for aligning probe card in semiconductor device testing

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations40

MACRONIX INT CO LTD

1 patent

TAIWAN SEMICONDUCTOR MFG

1 patent