Inventor

YOU JUNG-GUN

KR54 patents

⚠️ This page may combine multiple inventors who share the name “YOU JUNG-GUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YOU JUNG-GUN

SAMSUNG ELECTRONICS CO LTD

FIN field effect transistors having liners between device isolation layers and active areas of the device

Semiconductor device

Semiconductor device and method for fabricating the same

Semiconductor devices and methods of manufacturing the same

Methods of manufacturing semiconductor devices by forming source/drain regions before gate electrode separation

Methods of manufacturing semiconductor devices by forming source/drain regions before gate electrode separation

Fin field effect transistors having liners between device isolation layers and active areas of the device

Semiconductor device

Integrated circuit device and method of manufacturing the same

Semiconductor device and method for fabricating the same

Semiconductor device

Integrated circuit device and method of manufacturing the same

Semiconductor devices and fabricating methods thereof

Semiconductor device and method for fabricating the same

Semiconductor device and method of fabricating the same

Semiconductor device having fin-type patterns

Semiconductor device and method of fabricating the same

Vertical field effect transistor and semiconductor device including the same

Semiconductor device and method of fabricating the same

Vertical field effect transistor and semiconductor device including the same

Semiconductor device having asymmetric fin-shaped pattern

Semiconductor devices having gate structures with skirt regions

Semiconductor devices having gate structures with skirt regions

Semiconductor device having dummy gates and method of fabricating the same

Semiconductor device

Multi-pattern semiconductor device and method for fabricating same

Semiconductor device having fin-type pattern with varying widths along a center vertical line thereof

Fin field effect transistors having liners between device isolation layers and active areas of the device

Semiconductor device

Semiconductor device

Semiconductor device

Metal-oxide-semiconductor field effect transistors including nanosheets

Semiconductor device

Semiconductor device

Semiconductor devices and fabricating methods thereof

Integrated circuit device

Semiconductor devices and fabricating methods thereof

Semiconductor device having asymmetric fin-shaped pattern

Semiconductor device having asymmetric fin-shaped pattern

Semiconductor device having fin-type patterns

Semiconductor device and method of fabricating the same

Methods for fabricating semiconductor devices having fin-shaped patterns by selectively removing oxidized portions of the fin-shaped patterns

Semiconductor device

YOU JUNG-GUN

Integrated circuit device and method of manufacturing the same

Semiconductor device having asymmetric fin-shaped pattern

Methods for fabricating semiconductor devices having fin-shaped patterns by selectively removing oxidized fin-shaped patterns

YOU JUNG GUN

Fin semiconductor device including dummy gate on isolation layer

Semiconductor devices having gate structures with skirt regions

KIM KI IL

Integrated circuit device and method of manufacturing the same

SUNG SUG HYUN

Integrated circuit (IC) devices including stress inducing layers