Inventor

PARK GI-GWAN

KR64 patents

⚠️ This page may combine multiple inventors who share the name “PARK GI-GWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PARK GI-GWAN

SAMSUNG ELECTRONICS CO LTD

Multigate metal-oxide semiconductor field effect transistor

FIN field effect transistors having liners between device isolation layers and active areas of the device

Semiconductor device and method for fabricating the same

Semiconductor device including transistors with adjusted threshold voltages

Semiconductor device having a fin-shaped active region and a gate electrode

Integrated circuit device and method of fabricating the same

Integrated circuit device and method of manufacturing the same

Semiconductor device

Semiconductor device and method of fabricating the same

Integrated circuit device and method of fabricating the same

Integrated circuit device and method of manufacturing the same

Semiconductor device and method for fabricating the same

Semiconductor device and fabricating method thereof

Semiconductor device and method for fabricating the same

Semiconductor device and fabricating method thereof

Semiconductor devices including insulating materials in fins

Integrated circuit device and method of fabricating the same

Semiconductor devices and methods of manufacturing the same

Semiconductor device

Fin field effect transistors having liners between device isolation layers and active areas of the device

Semiconductor device including transistors with different threshold voltages

Integrated circuit device and method of manufacturing the same

Semiconductor device and method for fabricating the same

Method of forming SiOCN material layer and method of fabricating semiconductor device

Semiconductor device and method for fabricating the same

Integrated circuit device and method of manufacturing the same

Semiconductor devices and methods of manufacturing the same

Semiconductor device

Integrated circuit device and method of fabricating the same

Semiconductor devices and methods of manufacturing the same

Semiconductor device having fin-type patterns

Methods of manufacturing semiconductor devices

Semiconductor device with a fin-shaped active region and an gate electrode

Semiconductor device

Semiconductor device with a fin-shaped active region and a gate electrode

Method of fabricating semiconductor device

Semiconductor device with chamfered upper portions of work function layer

Semiconductor device with a fin-shaped active region and a gate electrode

Semiconductor device including source/drain having sidewalls with convex and concave portions

Semiconductor device

Semiconductor device

Multi-gate metal-oxide-semiconductor field effect transistor

Semiconductor device and method of fabricating the same

Semiconductor device

Semiconductor device and method of fabricating the same

Semiconductor device

KIM KI IL

Integrated circuit device and method of manufacturing the same

YOU JUNG-GUN

Integrated circuit device and method of manufacturing the same

TAK YONG SUK

Material layers, semiconductor devices including the same, and methods of fabricating material layers and semiconductor devices

SUNG SUG HYUN

Integrated circuit (IC) devices including stress inducing layers