Inventor

SUNG SUG-HYUN

KR21 patents

⚠️ This page may combine multiple inventors who share the name “SUNG SUG-HYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SUNG SUG-HYUN

SAMSUNG ELECTRONICS CO LTD

FIN field effect transistors having liners between device isolation layers and active areas of the device

Fin field effect transistors having liners between device isolation layers and active areas of the device

Semiconductor device and method for fabricating the same

Semiconductor devices and fabricating methods thereof

Semiconductor device and method of fabricating the same

Semiconductor device and method of fabricating the same

Method of fabricating semiconductor device

Method of fabricating semiconductor device

Fin field effect transistors having liners between device isolation layers and active areas of the device

Semiconductor device

Metal-oxide-semiconductor field effect transistors including nanosheets

Semiconductor devices and fabricating methods thereof

Semiconductor devices and fabricating methods thereof

Semiconductor device and method of fabricating the same

Methods for fabricating semiconductor devices having fin-shaped patterns by selectively removing oxidized portions of the fin-shaped patterns

Semiconductor device having field insulation layer between two fins

Semiconductor device

Semiconductor devices and methods for manufacturing the same

Semiconductor devices and methods of fabricating the same

SUNG SUG HYUN

Integrated circuit (IC) devices including stress inducing layers

YOU JUNG-GUN

Methods for fabricating semiconductor devices having fin-shaped patterns by selectively removing oxidized fin-shaped patterns