Inventor
AMSTATT BENOIT
FR9 patents
⚠️ This page may combine multiple inventors who share the name “AMSTATT BENOIT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
COMMISSARIAT ENERGIE ATOMIQUE
7 patentsUS9698011B2Jul 4, 2017
Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps
COMMISSARIAT ENERGIE ATOMIQUE3 citations70
US9679966B2Jun 13, 2017
Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device
COMMISSARIAT ENERGIE ATOMIQUE3 citations70
US9559256B2Jan 31, 2017
Method for manufacturing a semiconductor structure and semiconductor component comprising such a semiconductor structure
COMMISSARIAT ENERGIE ATOMIQUE4 citations69
US10636653B2Apr 28, 2020
Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps
COMMISSARIAT ENERGIE ATOMIQUE3 citations68
US9991342B2Jun 5, 2018
Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device
COMMISSARIAT ENERGIE ATOMIQUE3 citations68
US10340138B2Jul 2, 2019
Electronic device with a wire element extending from an electroconductive layer comprising zirconium carbide or hafnium carbide
COMMISSARIAT ENERGIE ATOMIQUE0 citations48
US10801129B2Oct 13, 2020
Nucleation structure suitable for epitaxial growth of three-dimensional semiconductor elements
COMMISSARIAT ENERGIE ATOMIQUE0 citations37