P

Inventor

WU LINCHUN

CN34 patents

Patents

34 patents
US11562945B2Jan 24, 2023

Semiconductor device having a spacer structure in a conductive layer and a contact structure in the spacer structure

YANGTZE MEMORY TECH CO LTD7 citations86
US11081524B2Aug 3, 2021

Three-dimensional memory devices

YANGTZE MEMORY TECH CO LTD7 citations83
US12136618B2Nov 5, 2024

Three-dimensional memory device with backside source contact

YANGTZE MEMORY TECH CO LTD2 citations73
US12136586B2Nov 5, 2024

Semiconductor devices having a conductive layer stacking with an insulating layer and a spacer structure through the conductive layer

YANGTZE MEMORY TECH CO LTD2 citations73
US11716853B2Aug 1, 2023

Method for fabricating three-dimensional memory device by thickening an epitaxial layer

YANGTZE MEMORY TECH CO LTD2 citations73
US11626416B2Apr 11, 2023

Method for forming three-dimensional memory device with backside source contact

YANGTZE MEMORY TECH CO LTD2 citations73
US11456290B2Sep 27, 2022

Three-dimensional memory device with backside source contact

YANGTZE MEMORY TECH CO LTD3 citations73
US11380629B2Jul 5, 2022

Methods for forming three-dimensional memory devices with supporting structure for staircase region

YANGTZE MEMORY TECH CO LTD5 citations73
US11227871B2Jan 18, 2022

Three-dimensional memory device and method for forming the same

YANGTZE MEMORY TECH CO LTD4 citations73
US10797076B2Oct 6, 2020

Methods for forming three-dimensional memory devices

YANGTZE MEMORY TECH CO LTD4 citations72
US12519038B2Jan 6, 2026

Semiconductor device including a memory stack and a contact structure in a spacer structure

YANGTZE MEMORY TECH CO LTD0 citations62
US12419050B2Sep 16, 2025

Semiconductor device and its manufacturing method, memory and memory system

YANGTZE MEMORY TECH CO LTD0 citations62
US12114498B2Oct 8, 2024

Three-dimensional memory devices

YANGTZE MEMORY TECH CO LTD0 citations62
US12057372B2Aug 6, 2024

Methods for forming contact structures and semiconductor devices including forming a spacer structure into a base structure

YANGTZE MEMORY TECH CO LTD0 citations62
US12058858B2Aug 6, 2024

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD1 citations62
US12048148B2Jul 23, 2024

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11901313B2Feb 13, 2024

Methods for forming three-dimensional memory devices with supporting structure for staircase region

YANGTZE MEMORY TECH CO LTD0 citations62
US11751394B2Sep 5, 2023

Three-dimensional memory device and method for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11723201B2Aug 8, 2023

Method of forming three-dimensional memory device with epitaxially grown layers

YANGTZE MEMORY TECH CO LTD0 citations62
US11574921B2Feb 7, 2023

Three-dimensional memory device and fabrication method thereof

YANGTZE MEMORY TECH CO LTD0 citations62
US11488977B2Nov 1, 2022

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11393844B2Jul 19, 2022

Methods for forming three-dimensional memory devices

YANGTZE MEMORY TECH CO LTD1 citations62
US12520488B2Jan 6, 2026

Three-dimensional memory device and fabrication method for improved yield and reliability

YANGTZE MEMORY TECH CO LTD0 citations61
US12501616B2Dec 16, 2025

Memory system, semiconductor device and fabrication method therefor

YANGTZE MEMORY TECH CO LTD0 citations60
US12513906B2Dec 30, 2025

Three-dimensional NAND memory device having word line contact with dielectric filler

YANGTZE MEMORY TECH CO LTD0 citations52
US12363898B2Jul 15, 2025

3D NAND memory device with non-uniform channel structure and method for forming the same

YANGTZE MEMORY TECH CO LTD0 citations52
US12283322B2Apr 22, 2025

Three-dimensional NAND memory and fabrication method thereof

YANGTZE MEMORY TECH CO LTD0 citations52
US11647632B2May 9, 2023

Three-dimensional memory devices with supporting structure for staircase region

YANGTZE MEMORY TECH CO LTD0 citations52
US11233066B2Jan 25, 2022

Three-dimensional memory device and method for forming the same

YANGTZE MEMORY TECH CO LTD0 citations52
US12598748B2Apr 7, 2026

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations51
US12490430B2Dec 2, 2025

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations51
US12432918B2Sep 30, 2025

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations51
US12279429B2Apr 15, 2025

Three-dimensional memory devices with supporting structure for staircase region and spacer structure for contact structure and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations50
US12396171B2Aug 19, 2025

Method of fabricating three-dimensional NAND memory

YANGTZE MEMORY TECH CO LTD0 citations48