P

Inventor

OOTSUKA FUMIO

JP40 patents
⚠️ This page may combine multiple inventors who share the name “OOTSUKA FUMIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HITACHI LTD

23 patents
US6613634B2Sep 2, 2003

Method of manufacturing a semiconductor device using oblique ion injection

HITACHI LTD68 citations96
US5780882AJul 14, 1998

Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same

HITACHI LTD33 citations96
US5331191AJul 19, 1994

Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same

HITACHI LTD24 citations96
US5202275AApr 13, 1993

Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same

HITACHI LTD43 citations96
US4937645AJun 26, 1990

Semiconductor device and a method of manufacturing the same

HITACHI LTD58 citations96
US5309392AMay 3, 1994

Semiconductor IC device using ferroelectric material in data storage cells with light assisted state transition

HITACHI LTD22 citations93
US5798551AAug 25, 1998

Semiconductor integrated circuit device and method of manufacturing the same

HITACHI LTD23 citations92
US5512502AApr 30, 1996

Manufacturing method for semiconductor integrated circuit device

HITACHI LTD34 citations92
US6635937B2Oct 21, 2003

Semiconductor integrated circuit device

HITACHI LTD14 citations91
US6524903B2Feb 25, 2003

Method of manufacturing a semiconductor device having two peaks in an impurity concentration distribution

HITACHI LTD33 citations91
US5329138AJul 12, 1994

Short channel CMOS device capable of high performance at low voltage

HITACHI LTD34 citations89
US6548847B2Apr 15, 2003

Semiconductor integrated circuit device having a first wiring strip exposed through a connecting hole, a transition-metal film in the connecting hole and an aluminum wiring strip thereover, and a transition-metal nitride film between the aluminum wiring strip and the transition-metal film

HITACHI LTD12 citations82
US6342412B1Jan 29, 2002

Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same

HITACHI LTD8 citations82
US6169324B1Jan 2, 2001

Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same

HITACHI LTD13 citations82
US6127255AOct 3, 2000

Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same

HITACHI LTD8 citations82
US5811316ASep 22, 1998

Method of forming teos oxide and silicon nitride passivation layer on aluminum wiring

HITACHI LTD8 citations82
US5739589AApr 14, 1998

Semiconductor integrated circuit device process for fabricating the same and apparatus for fabricating the same

HITACHI LTD13 citations82
US6747324B2Jun 8, 2004

Method of manufacturing a semiconductor integrated circuit device

HITACHI LTD5 citations74
US6661063B2Dec 9, 2003

Semiconductor integrated circuit device

HITACHI LTD6 citations74
US6171892B1Jan 9, 2001

Method of manufacturing a semiconductor integrated circuit device

HITACHI LTD6 citations74
US5557147ASep 17, 1996

Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same

HITACHI LTD7 citations74
US7075157B2Jul 11, 2006

Method of manufacturing a semiconductor integrated circuit device

HITACHI LTD3 citations63
US6603178B2Aug 5, 2003

Semiconductor integrated circuit device and method of manufacture thereof

HITACHI LTD2 citations63

RENESAS TECH CORP

10 patents

NIPPON DENSO CO

4 patents

ASM IP HOLDING BV

1 patent

RENESAS TEHNOLOGY CORP

1 patent

HITACHI VLSI ENG

1 patent