Inventor
TSAI JIUNN-YANN
US9 patents
⚠️ This page may combine multiple inventors who share the name “TSAI JIUNN-YANN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LSI LOGIC CORP
8 patentsUS5851890ADec 22, 1998
Process for forming integrated circuit structure with metal silicide contacts using notched sidewall spacer on gate electrode
LSI LOGIC CORP88 citations95
US6010952AJan 4, 2000
Process for forming metal silicide contacts using amorphization of exposed silicon while minimizing device degradation
LSI LOGIC CORP24 citations92
US5874342AFeb 23, 1999
Process for forming MOS device in integrated circuit structure using cobalt silicide contacts as implantation media
LSI LOGIC CORP69 citations92
US6020242AFeb 1, 2000
Effective silicide blocking
LSI LOGIC CORP49 citations90
US6034401AMar 7, 2000
Local interconnection process for preventing dopant cross diffusion in shared gate electrodes
LSI LOGIC CORP22 citations89
US6037262AMar 14, 2000
Process for forming vias, and trenches for metal lines, in multiple dielectric layers of integrated circuit structure
LSI LOGIC CORP16 citations82
US6147409ANov 14, 2000
Modified multilayered metal line structure for use with tungsten-filled vias in integrated circuit structures
LSI LOGIC CORP10 citations72
US6495408B1Dec 17, 2002
Local interconnection process for preventing dopant cross diffusion in shared gate electrodes
LSI LOGIC CORP8 citations70