P

Inventor

PINDL STEPHAN

DE27 patents
⚠️ This page may combine multiple inventors who share the name “PINDL STEPHAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

21 patents
US10186468B2Jan 22, 2019

System and method for a transducer in an eWLB package

INFINEON TECHNOLOGIES AG6 citations82
US10955599B2Mar 23, 2021

Light emitter devices, photoacoustic gas sensors and methods for forming light emitter devices

INFINEON TECHNOLOGIES AG2 citations73
US9503823B2Nov 22, 2016

Capacitive microphone with insulated conductive plate

INFINEON TECHNOLOGIES AG5 citations73
US10546752B2Jan 28, 2020

System and method for a transducer in an eWLB package

INFINEON TECHNOLOGIES AG1 citations71
US11608265B2Mar 21, 2023

Method and structure for sensors on glass

INFINEON TECHNOLOGIES AG0 citations62
US11081551B2Aug 3, 2021

Method for producing a graphene-based sensor

INFINEON TECHNOLOGIES AG0 citations62
US9938140B2Apr 10, 2018

MEMS device and method of manufacturing a MEMS device

INFINEON TECHNOLOGIES AG1 citations62
US9402138B2Jul 26, 2016

MEMS device and method of manufacturing a MEMS device

INFINEON TECHNOLOGIES AG1 citations62
US11908763B2Feb 20, 2024

Apparatus having a functional structure delimited by a frame structure and method for producing same

INFINEON TECHNOLOGIES AG0 citations60
US11211298B2Dec 28, 2021

System and method for a transducer in an EWLB package

INFINEON TECHNOLOGIES AG0 citations60
US11189539B2Nov 30, 2021

Apparatus having a functional structure delimited by a frame structure and method for producing same

INFINEON TECHNOLOGIES AG0 citations60
US11926521B2Mar 12, 2024

IR emitter with glass lid

INFINEON TECHNOLOGIES AG0 citations59
US11652022B2May 16, 2023

Power semiconductor device and method

INFINEON TECHNOLOGIES AG0 citations57
US10829368B2Nov 10, 2020

MEMS device and method of manufacturing a MEMS device

INFINEON TECHNOLOGIES AG0 citations52
US10384934B2Aug 20, 2019

MEMS device and method of manufacturing a MEMS device

INFINEON TECHNOLOGIES AG0 citations52
US11402556B2Aug 2, 2022

Wafer level method for manufacturing integrated infrared (IR) emitter elements having an optical IR filter placed on the main surface region of the carrier substrate on which the IR emitter is formed

INFINEON TECHNOLOGIES AG0 citations51
US10875763B2Dec 29, 2020

Apparatus having a cavity structure and method for producing same

INFINEON TECHNOLOGIES AG0 citations51
US10442682B2Oct 15, 2019

Apparatus having a cavity structure and method for producing same

INFINEON TECHNOLOGIES AG0 citations51
US6410407B1Jun 25, 2002

Product including a silicon-containing functional layer and an insulating layer made of silicon dioxide, and method fabricating the product

INFINEON TECHNOLOGIES AG0 citations51
US12324186B2Jun 3, 2025

Power semiconductor device and method

INFINEON TECHNOLOGIES AG0 citations50
US10694584B2Jun 23, 2020

Infrared emitter arrangement and method for producing an infrared emitter arrangement

INFINEON TECHNOLOGIES AG0 citations41

SIEMENS AG

4 patents

HYDRAULIK RING GMBH

1 patent

INFINEON TECHNOLOGIES

1 patent