Inventor

SHATALOV MAXIM S

US159 patents

⚠️ This page may combine multiple inventors who share the name “SHATALOV MAXIM S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHATALOV MAXIM S

SENSOR ELECTRONIC TECH INC

Ultraviolet system for disinfection

Storage device including target UV illumination ranges

Ultraviolet-based sterilization

Ultraviolet-based sterilization

Storage device including ultraviolet illumination

Ultraviolet system for disinfection

Semiconductor structure with stress-reducing buffer structure

Patterned layer design for group III nitride layer growth

Device with transparent and higher conductive regions in lateral cross section of semiconductor layer

Semiconductor structure with inhomogeneous regions

Stress relieving semiconductor layer

Metallic contact for optoelectronic semiconductor device

Light emitting heterostructure with partially relaxed semiconductor layer

Semiconductor material doping

Semiconductor layer including compositional inhomogeneities

Deep ultraviolet light emitting diode

Emitting device with improved extraction

Ohmic contact to semiconductor

Stress relieving semiconductor layer

Ultraviolet reflective rough adhesive contact

Plant growth with radiation-based mildew and/or bacteria control

Controlling ultraviolet intensity over a surface of a light sensitive object

Storage device including ultraviolet illumination

Ultraviolet-based mildew control

Ultraviolet gradient sterilization, disinfection, and storage system

Ultraviolet system for disinfection

Multi wave sterilization system

Storage device including ultraviolet illumination

Storage device including target UV illumination ranges

Optoelectronic device with modulation doping

Heterostructure including a composite semiconductor layer

Patterned layer design for group III nitride layer growth

Metallic contact for optoelectronic semiconductor device

Patterned layer design for group III nitride layer growth

Patterned layer design for group III nitride layer growth

Group III nitride heterostructure for optoelectronic device

Optoelectronic device with modulation doping

Stress relieving semiconductor layer

Optoelectronic device with modulation doping

Patterned substrate design for layer growth

Ultraviolet reflective contact

Patterned layer design for group III nitride layer growth

Ohmic contact to semiconductor layer

Controlling ultraviolet intensity over a surface of a light sensitive object

Storage device including ultraviolet illumination

SHATALOV MAXIM S

Semiconductor material doping

Patterned substrate design for layer growth

Emitting device with improved extraction

Device with inverted large scale light extraction structures

Semiconductor material doping based on target valence band discontinuity