Inventor
SALZ HEIKE
DE12 patents
⚠️ This page may combine multiple inventors who share the name “SALZ HEIKE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
6 patentsUS7550396B2Jun 23, 2009
Method for reducing resist poisoning during patterning of silicon nitride layers in a semiconductor device
ADVANCED MICRO DEVICES INC507 citations98
US7678690B2Mar 16, 2010
Semiconductor device comprising a contact structure with increased etch selectivity
ADVANCED MICRO DEVICES INC12 citations84
US7416973B2Aug 26, 2008
Method of increasing the etch selectivity in a contact structure of semiconductor devices
ADVANCED MICRO DEVICES INC8 citations73
US7608501B2Oct 27, 2009
Technique for creating different mechanical strain by forming a contact etch stop layer stack having differently modified intrinsic stress
ADVANCED MICRO DEVICES INC2 citations62
US7482219B2Jan 27, 2009
Technique for creating different mechanical strain by a contact etch stop layer stack with an intermediate etch stop layer
ADVANCED MICRO DEVICES INC6 citations62
US8034726B2Oct 11, 2011
Interlayer dielectric material in a semiconductor device comprising a doublet structure of stressed materials
ADVANCED MICRO DEVICES INC3 citations61
GLOBALFOUNDRIES INC
3 patentsUS7700377B2Apr 20, 2010
Method for reducing etch-induced process uniformities by omitting deposition of an endpoint detection layer during patterning of stressed overlayers in a semiconductor device
GLOBALFOUNDRIES INC2 citations62
US7883629B2Feb 8, 2011
Technique for patterning differently stressed layers formed above transistors by enhanced etch control strategies
GLOBALFOUNDRIES INC0 citations47
US7763507B2Jul 27, 2010
Stressed interlayer dielectric with reduced probability for void generation in a semiconductor device by using an intermediate etch control layer of increased thickness
GLOBALFOUNDRIES INC0 citations41