Inventor
YANG JUN-KYU
KR16 patents
⚠️ This page may combine multiple inventors who share the name “YANG JUN-KYU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
6 patentsUS9431416B2Aug 30, 2016
Vertical-type nonvolatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US9276133B2Mar 1, 2016
Vertical memory devices and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD12 citations84
US10720447B2Jul 21, 2020
Integrated circuit memory devices having impurity-doped dielectric regions therein and methods of forming same
SAMSUNG ELECTRONICS CO LTD2 citations72
US10411034B2Sep 10, 2019
Integrated circuit memory devices having impurity-doped dielectric regions therein and methods of forming same
SAMSUNG ELECTRONICS CO LTD2 citations72
US10355099B2Jul 16, 2019
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations61
US7994003B2Aug 9, 2011
Nonvolatile memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations38
YANG JUN-KYU
4 patentsUS8748249B2Jun 10, 2014
Vertical structure non-volatile memory device and method of manufacturing the same
YANG JUN-KYU13 citations83
US8617947B2Dec 31, 2013
Method of manufacturing semiconductor device
YANG JUN-KYU6 citations82
US8497142B2Jul 30, 2013
Methods of forming conductive layer patterns using gas phase cleaning process and methods of manufacturing semiconductor devices
YANG JUN-KYU4 citations61
US8435877B2May 7, 2013
Methods of manufacturing semiconductor devices
YANG JUN-KYU3 citations60
NAM PHIL-OUK
3 patentsUS8987805B2Mar 24, 2015
Vertical type semiconductor devices including oxidation target layers
NAM PHIL-OUK25 citations92
US9461061B2Oct 4, 2016
Vertical memory devices and methods of manufacturing the same
NAM PHIL-OUK6 citations72
US9082659B1Jul 14, 2015
Methods of forming vertical type semiconductor devices including oxidation target layers
NAM PHIL-OUK1 citations51