Inventor
MA Chih-Yu
TW18 patents
Patents
18 patentsUS10991826B2Apr 27, 2021
Semiconductor device and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10720530B2Jul 21, 2020
Semiconductor device and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US11545399B2Jan 3, 2023
FinFET EPI channels having different heights on a stepped substrate
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11522086B2Dec 6, 2022
Semiconductor device and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10490661B2Nov 26, 2019
Dopant concentration boost in epitaxially formed material
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12446254B2Oct 14, 2025
Semiconductor device and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12402393B2Aug 26, 2025
FinFET EPI channels having different heights on a stepped substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11935955B2Mar 19, 2024
Semiconductor device and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11776851B2Oct 3, 2023
Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11721760B2Aug 8, 2023
Dopant concentration boost in epitaxially formed material
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11342228B2May 24, 2022
Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10734524B2Aug 4, 2020
Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10347764B2Jul 9, 2019
Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12165924B2Dec 10, 2024
Semiconductor devices having merged source/drain features and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US11705371B2Jul 18, 2023
Semiconductor devices having merged source/drain features and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US12414363B2Sep 9, 2025
Semiconductor device and manufacturing methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations56
US10510618B2Dec 17, 2019
FinFET EPI channels having different heights on a stepped substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9721826B1Aug 1, 2017
Wafer supporting structure, and device and method for manufacturing semiconductor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations45