Inventor
KEYS PATRICK H
US17 patents
⚠️ This page may combine multiple inventors who share the name “KEYS PATRICK H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
14 patentsUS6936505B2Aug 30, 2005
Method of forming a shallow junction
INTEL CORP43 citations92
US10790281B2Sep 29, 2020
Stacked channel structures for MOSFETs
INTEL CORP8 citations84
US10026829B2Jul 17, 2018
Semiconductor device with isolated body portion
INTEL CORP8 citations83
US11107891B2Aug 31, 2021
Hexagonal arrays for quantum dot devices
INTEL CORP4 citations73
US11404319B2Aug 2, 2022
Vertically stacked finFETs and shared gate patterning
INTEL CORP5 citations72
US10840366B2Nov 17, 2020
Nanowire structures having wrap-around contacts
INTEL CORP1 citations72
US12100623B2Sep 24, 2024
Vertically stacked finFETs and shared gate patterning
INTEL CORP0 citations62
US11183564B2Nov 23, 2021
Quantum dot devices with strain control
INTEL CORP1 citations62
US10978590B2Apr 13, 2021
Methods and apparatus to remove epitaxial defects in semiconductors
INTEL CORP0 citations62
US10665770B2May 26, 2020
Fin strain in quantum dot devices
INTEL CORP1 citations62
US12230687B2Feb 18, 2025
Lateral gate material arrangements for quantum dot devices
INTEL CORP0 citations61
US10896907B2Jan 19, 2021
Retrograde transistor doping by heterojunction materials
INTEL CORP0 citations61
US10636907B2Apr 28, 2020
Deep EPI enabled by backside reveal for stress enhancement and contact
INTEL CORP0 citations52
US7790587B2Sep 7, 2010
Method to reduce junction leakage through partial regrowth with ultrafast anneal and structures formed thereby
INTEL CORP0 citations47