P

Inventor

NAKANE HISASHI

JP36 patents
⚠️ This page may combine multiple inventors who share the name “NAKANE HISASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOKYO OHKA KOGYO CO LTD

28 patents
US4833067AMay 23, 1989

Developing solution for positive-working photoresist comprising tmah and non-ionic surfactant

TOKYO OHKA KOGYO CO LTD75 citations96
US4737438AApr 12, 1988

Negative-working photosensitive composition comprising a diphenylamine-melamine condensate and an azide compound

TOKYO OHKA KOGYO CO LTD61 citations96
US4385086AMay 24, 1983

Method for preventing leaching of contaminants from solid surfaces

TOKYO OHKA KOGYO CO LTD75 citations96
US4318767AMar 9, 1982

Apparatus for the treatment of semiconductor wafers by plasma reaction

TOKYO OHKA KOGYO CO LTD112 citations96
US4208159AJun 17, 1980

Apparatus for the treatment of a wafer by plasma reaction

TOKYO OHKA KOGYO CO LTD70 citations96
US4483651ANov 20, 1984

Automatic apparatus for continuous treatment of leaf materials with gas plasma

TOKYO OHKA KOGYO CO LTD58 citations95
US4277525AJul 7, 1981

Liquid compositions for forming silica coating films

TOKYO OHKA KOGYO CO LTD61 citations95
US4245154AJan 13, 1981

Apparatus for treatment with gas plasma

TOKYO OHKA KOGYO CO LTD93 citations95
US4904571AFeb 27, 1990

Remover solution for photoresist

TOKYO OHKA KOGYO CO LTD60 citations94
US4045231AAug 30, 1977

Photosensitive resin composition for flexographic printing plates

TOKYO OHKA KOGYO CO LTD102 citations94
US4844832AJul 4, 1989

Containing an arylsulfonic acid, a phenol and a naphalenic solvent

TOKYO OHKA KOGYO CO LTD31 citations92
US4784937ANov 15, 1988

Developing solution for positive-working photoresist comprising a metal ion free organic base and an anionic surfactant

TOKYO OHKA KOGYO CO LTD35 citations92
US4738915AApr 19, 1988

Positive-working O-quinone diazide photoresist composition with 2,3,4-trihydroxybenzophenone

TOKYO OHKA KOGYO CO LTD31 citations92
US4735890AApr 5, 1988

Photomasks for photolithographic fine patterning

TOKYO OHKA KOGYO CO LTD41 citations92
US4336438AJun 22, 1982

Apparatus for automatic semi-batch sheet treatment of semiconductor wafers by plasma reaction

TOKYO OHKA KOGYO CO LTD46 citations91
US4590149AMay 20, 1986

Method for fine pattern formation on a photoresist

TOKYO OHKA KOGYO CO LTD35 citations90
US4578559AMar 25, 1986

Plasma etching method

TOKYO OHKA KOGYO CO LTD23 citations82
US4149923AApr 17, 1979

Apparatus for the treatment of wafer materials by plasma reaction

TOKYO OHKA KOGYO CO LTD28 citations82
US4610953ASep 9, 1986

Aqueous developer solution for positive type photoresists with tetramethyl ammonium hydroxide and trimethyl hydroxyethyl ammonium hydroxide

TOKYO OHKA KOGYO CO LTD21 citations81
US4702992AOct 27, 1987

Method of preparing photoresist material with undercoating of photoextinction agent and condensation product

TOKYO OHKA KOGYO CO LTD16 citations73
US4243740AJan 6, 1981

Light sensitive compositions of polymethyl isopropenyl ketone

TOKYO OHKA KOGYO CO LTD9 citations73
US4209581AJun 24, 1980

Soluble photosensitive resin composition

TOKYO OHKA KOGYO CO LTD13 citations73
US4797348AJan 10, 1989

Method of forming a positive resist pattern in photoresist of o-naphthoquinone diazide and bisazide with UV imaging exposure and far UV overall exposure

TOKYO OHKA KOGYO CO LTD7 citations72
US4401745AAug 30, 1983

Composition and process for ultra-fine pattern formation

TOKYO OHKA KOGYO CO LTD16 citations71
US4174222ANov 13, 1979

Positive-type O-quinone diazide containing photoresist compositions

TOKYO OHKA KOGYO CO LTD16 citations71
US5281508AJan 25, 1994

Positive-working photoresist containing o-naphthoquinone diazide sulfonic acid ester and novolak resin consisting of 35 to 43% m-cresol and 65 to 57% p-cresol with substantial absence of o-cresol

TOKYO OHKA KOGYO CO LTD4 citations62
US4902770AFeb 20, 1990

Undercoating material for photosensitive resins

TOKYO OHKA KOGYO CO LTD6 citations62
US4588675AMay 13, 1986

Method for fine pattern formation on a photoresist

TOKYO OHKA KOGYO CO LTD4 citations60

TOKYO DENSHI KAGAKU KK

4 patents

TOKYO DENSHI KAGAKU KABUSHIKI

3 patents

PHOTOPOLY OHKA CO LTD

1 patent