P

Inventor

HARAFUJI KENJI

JP20 patents
⚠️ This page may combine multiple inventors who share the name “HARAFUJI KENJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

18 patents
US5928528AJul 27, 1999

Plasma treatment method and plasma treatment system

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD190 citations98
US5182718AJan 26, 1993

Method and apparatus for writing a pattern on a semiconductor sample based on a resist pattern corrected for proximity effects resulting from direct exposure of the sample by a charged-particle beam or light

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD107 citations96
US5057689AOct 15, 1991

Scanning electron microscope and a method of displaying cross sectional profiles using the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD63 citations94
US6867112B1Mar 15, 2005

Method of fabricating nitride semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD17 citations92
US6737684B1May 18, 2004

Bipolar transistor and semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD40 citations92
US6586774B2Jul 1, 2003

Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD21 citations92
US6466597B1Oct 15, 2002

Semiconductor laser device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD27 citations92
US5345145ASep 6, 1994

Method and apparatus for generating highly dense uniform plasma in a high frequency electric field

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD33 citations92
US5332880AJul 26, 1994

Method and apparatus for generating highly dense uniform plasma by use of a high frequency rotating electric field

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD44 citations92
US5259922ANov 9, 1993

Drying etching method

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD25 citations92
US7160748B2Jan 9, 2007

Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations84
US6667185B2Dec 23, 2003

Method of fabricating nitride semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD10 citations74
US6544869B1Apr 8, 2003

Method and apparatus for depositing semiconductor film and method for fabricating semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations74
US5869402AFeb 9, 1999

Plasma generating and processing method and apparatus thereof

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD14 citations74
US5635021AJun 3, 1997

Dry etching Method

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations74
US5324388AJun 28, 1994

Dry etching method and dry etching apparatus

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD14 citations73
US4998020AMar 5, 1991

Electron beam exposure evaluation method

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD19 citations73
US6921678B2Jul 26, 2005

Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations63

MATSUSHITA ELECTRIC COMPANY LT

1 patent

HARAFUJI KENJI

1 patent