Inventor
HURLEY KELLY T
US16 patents
⚠️ This page may combine multiple inventors who share the name “HURLEY KELLY T”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
15 patentsUS6624022B1Sep 23, 2003
Method of forming FLASH memory
MICRON TECHNOLOGY INC41 citations96
US6127287AOct 3, 2000
Silicon nitride deposition method for use in forming a memory cell dielectric
MICRON TECHNOLOGY INC45 citations96
US6204206B1Mar 20, 2001
Silicon nitride deposition method
MICRON TECHNOLOGY INC44 citations95
US6808989B2Oct 26, 2004
Self-aligned floating gate flash cell system and method
MICRON TECHNOLOGY INC20 citations92
US6706594B2Mar 16, 2004
Optimized flash memory cell
MICRON TECHNOLOGY INC18 citations92
US6690051B2Feb 10, 2004
FLASH memory circuitry
MICRON TECHNOLOGY INC18 citations92
US6350708B1Feb 26, 2002
Silicon nitride deposition method
MICRON TECHNOLOGY INC15 citations92
US6297092B1Oct 2, 2001
Method and structure for an oxide layer overlaying an oxidation-resistant layer
MICRON TECHNOLOGY INC23 citations92
US7271060B2Sep 18, 2007
Semiconductor processing methods
MICRON TECHNOLOGY INC10 citations84
US7091087B2Aug 15, 2006
Optimized flash memory cell
MICRON TECHNOLOGY INC9 citations73
US6949792B2Sep 27, 2005
Stacked gate region of a memory cell in a memory device
MICRON TECHNOLOGY INC5 citations73
US6790721B2Sep 14, 2004
Metal local interconnect self-aligned source flash cell
MICRON TECHNOLOGY INC9 citations73
US6759708B2Jul 6, 2004
Stacked gate region of a nonvolatile memory cell for a computer
MICRON TECHNOLOGY INC8 citations73
US6674145B2Jan 6, 2004
Flash memory circuitry
MICRON TECHNOLOGY INC9 citations73
US6653683B2Nov 25, 2003
Method and structure for an oxide layer overlying an oxidation-resistant layer
MICRON TECHNOLOGY INC4 citations62