Inventor
TAGAKI MASATOSHI
JP16 patents
⚠️ This page may combine multiple inventors who share the name “TAGAKI MASATOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SEIKO EPSON CORP
13 patentsUS8742601B2Jun 3, 2014
Semiconductor device including a buffer layer structure for reducing stress
SEIKO EPSON CORP10 citations92
US9842821B2Dec 12, 2017
Semiconductor device including semiconductor chip, wiring, conductive material, and contact part
SEIKO EPSON CORP3 citations83
US9515043B2Dec 6, 2016
Semiconductor device including a buffer layer structure for reducing stress
SEIKO EPSON CORP5 citations83
US9331039B2May 3, 2016
Semiconductor device including a buffer layer structure for reducing stress
SEIKO EPSON CORP6 citations83
US9093334B2Jul 28, 2015
Semiconductor device including a buffer layer structure for reducing stress
SEIKO EPSON CORP7 citations83
US8952554B2Feb 10, 2015
Semiconductor device including a buffer layer structure for reducing stress
SEIKO EPSON CORP8 citations83
US10103120B2Oct 16, 2018
Semiconductor device including a buffer layer structure for reducing stress
SEIKO EPSON CORP1 citations62
US7663180B2Feb 16, 2010
Semiconductor device
SEIKO EPSON CORP3 citations62
US7649260B2Jan 19, 2010
Semiconductor device
SEIKO EPSON CORP4 citations61
US7598569B2Oct 6, 2009
Semiconductor device
SEIKO EPSON CORP2 citations61
US10658325B2May 19, 2020
Semiconductor device including a buffer layer structure for reducing stress
SEIKO EPSON CORP0 citations51
US7936064B2May 3, 2011
Semiconductor device
SEIKO EPSON CORP0 citations51
US7777334B2Aug 17, 2010
Semiconductor device having active element formation region provided under a bump pad
SEIKO EPSON CORP0 citations40
YUZAWA TAKESHI
3 patentsUS8614513B2Dec 24, 2013
Semiconductor device including a buffer layer structure for reducing stress
YUZAWA TAKESHI11 citations90
US8441125B2May 14, 2013
Semiconductor device
YUZAWA TAKESHI0 citations49
US8878365B2Nov 4, 2014
Semiconductor device having a conductive layer reliably formed under an electrode pad
YUZAWA TAKESHI0 citations39