P

Inventor

CHEVALLIER CHRISTOPHE

US118 patents
⚠️ This page may combine multiple inventors who share the name “CHEVALLIER CHRISTOPHE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UNITY SEMICONDUCTOR CORP

31 patents
US7538338B2May 26, 2009

Memory using variable tunnel barrier widths

UNITY SEMICONDUCTOR CORP144 citations99
US7020006B2Mar 28, 2006

Discharge of conductive array lines in fast memory

UNITY SEMICONDUCTOR CORP195 citations99
US7379364B2May 27, 2008

Sensing a signal in a two-terminal memory array having leakage current

UNITY SEMICONDUCTOR CORP99 citations98
US7372753B1May 13, 2008

Two-cycle sensing in a two-terminal memory array having leakage current

UNITY SEMICONDUCTOR CORP109 citations98
US7149108B2Dec 12, 2006

Memory array of a non-volatile RAM

UNITY SEMICONDUCTOR CORP73 citations98
US7054183B2May 30, 2006

Adaptive programming technique for a re-writable conductive memory device

UNITY SEMICONDUCTOR CORP104 citations98
US7889539B2Feb 15, 2011

Multi-resistive state memory device with conductive oxide electrodes

UNITY SEMICONDUCTOR CORP19 citations96
US7394679B2Jul 1, 2008

Multi-resistive state element with reactive metal

UNITY SEMICONDUCTOR CORP20 citations96
US7082052B2Jul 25, 2006

Multi-resistive state element with reactive metal

UNITY SEMICONDUCTOR CORP35 citations96
US9306549B2Apr 5, 2016

High voltage switching circuitry for a cross-point array

UNITY SEMICONDUCTOR CORP9 citations93
US8351264B2Jan 8, 2013

High voltage switching circuitry for a cross-point array

UNITY SEMICONDUCTOR CORP10 citations93
US7330370B2Feb 12, 2008

Enhanced functionality in a two-terminal memory array

UNITY SEMICONDUCTOR CORP19 citations93
US7149107B2Dec 12, 2006

Providing a reference voltage to a cross point memory array

UNITY SEMICONDUCTOR CORP21 citations93
US7126841B2Oct 24, 2006

Non-volatile memory with a single transistor and resistive memory element

UNITY SEMICONDUCTOR CORP20 citations93
US7099179B2Aug 29, 2006

Conductive memory array having page mode and burst mode write capability

UNITY SEMICONDUCTOR CORP21 citations93
US7095644B2Aug 22, 2006

Conductive memory array having page mode and burst mode read capability

UNITY SEMICONDUCTOR CORP24 citations93
US7985963B2Jul 26, 2011

Memory using variable tunnel barrier widths

UNITY SEMICONDUCTOR CORP36 citations92
US7326979B2Feb 5, 2008

Resistive memory device with a treated interface

UNITY SEMICONDUCTOR CORP51 citations92
US7186569B2Mar 6, 2007

Conductive memory stack with sidewall

UNITY SEMICONDUCTOR CORP20 citations91
US10650870B2May 12, 2020

Circuits and techniques to compensate memory access signals for variations of parameters in multiple layers of memory

UNITY SEMICONDUCTOR CORP3 citations84
US10210917B2Feb 19, 2019

Circuits and techniques to compensate memory access signals for variations of parameters in multiple layers of memory

UNITY SEMICONDUCTOR CORP3 citations84
US9997241B2Jun 12, 2018

High voltage switching circuitry for a cross-point array

UNITY SEMICONDUCTOR CORP4 citations84
US9870809B2Jan 16, 2018

Circuits and techniques to compensate memory access signals for variations of parameters in multiple layers of memory

UNITY SEMICONDUCTOR CORP4 citations84
US9384806B2Jul 5, 2016

Circuits and techniques to compensate memory access signals for variations of parameters in multiple layers of memory

UNITY SEMICONDUCTOR CORP6 citations84
US9129668B2Sep 8, 2015

Circuits and techniques to compensate memory access signals for variations of parameters in multiple layers of memory

UNITY SEMICONDUCTOR CORP4 citations84
US9047928B2Jun 2, 2015

High voltage switching circuitry for a cross-point array

UNITY SEMICONDUCTOR CORP7 citations84
US8854881B2Oct 7, 2014

Circuits and techniques to compensate memory access signals for variations of parameters in multiple layers of memory

UNITY SEMICONDUCTOR CORP7 citations84
US8854888B2Oct 7, 2014

High voltage switching circuitry for a cross-point array

UNITY SEMICONDUCTOR CORP4 citations84
US8705260B2Apr 22, 2014

Circuits and techniques to compensate data signals for variations of parameters affecting memory cells in cross point arrays

UNITY SEMICONDUCTOR CORP4 citations84
US8654565B2Feb 18, 2014

Access signal adjustment circuits and methods for memory cells in a cross-point array

UNITY SEMICONDUCTOR CORP4 citations84
US7528405B2May 5, 2009

Conductive memory stack with sidewall

UNITY SEMICONDUCTOR CORP9 citations84

CHEVALLIER CHRISTOPHE

5 patents

MICRON TECHNOLOGY INC

4 patents

QUALCOMM INC

2 patents

GHOLMIEH AZIZ

2 patents

SIAU CHANG HUA

1 patent

FREEWING AERIAL ROBOTICS CORP

1 patent

VALEO THERMIQUE HABITACLE

1 patent

SGS THOMSON MICROELECTRONICS

1 patent

NAGARAJA SUMEETH

1 patent

VALEO CLIMATISATION

1 patent

Showing the top 50 of 118 patents by PatentIndex Score.