Inventor

PARK SANG JINE

KR36 patents

⚠️ This page may combine multiple inventors who share the name “PARK SANG JINE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PARK SANG JINE

SAMSUNG ELECTRONICS CO LTD

Semiconductor devices including a dummy gate structure on a fin

Substrate processing apparatus

Integrated circuit device

Semiconductor devices including a dummy gate structure on a fin

Substrate processing apparatus and apparatus for manufacturing integrated circuit device

Semiconductor device and method for fabricating the same

Methods of forming semiconductor devices including trench walls having multiple slopes

Semiconductor devices including an isolation layer on a fin and methods of forming semiconductor devices including an isolation layer on a fin

Semiconductor devices and methods of manufacturing the same

Substrate processing apparatus and apparatus for manufacturing integrated circuit device

Methods of fabricating semiconductor devices including support patterns

Methods of forming field effect transistors having stress-inducing sidewall insulating spacers thereon

Method of forming field effect transistors using diluted hydrofluoric acid to remove sacrificial nitride spacers

Apparatus and method for processing substrate

Substrate drying apparatus and semiconductor device manufacturing method using same

Semiconductor devices including a dummy gate structure on a fin

Semiconductor devices utilizing spacer structures

Methods of manufacturing semiconductor devices

Semiconductor device and method of fabricating the same

Substrate processing apparatus and method thereof

Chemical supplier, processing apparatus including the chemical supplier

Process chamber for a supercritical process and apparatus for treating substrates having the same

Methods of fabricating integrated circuit devices using anti-reflective coating as implant blocking layer

PARK SANG-JINE

Semiconductor devices including a dummy gate structure on a fin

Semiconductor devices including insulating gates and methods for fabricating the same

Semiconductor devices including a dummy gate structure on a fin

Semiconductor devices including trench walls having multiple slopes

Methods of fabricating semiconductor devices

Semiconductor devices including an isolation layer on a fin and methods of forming semiconductor devices including an isolation layer on a fin

Semiconductor devices and methods of manufacturing the same

Method of fabricating semiconductor device

Methods for fabricating semiconductor devices

Methods for fabricating semiconductor devices

JEONG JI MIN

Semiconductor device and method for fabricating the same

BAEK JAE-JIK

Semiconductor devices including a contact structure and methods of manufacturing the same

AHN KEVIN

Methods of fabricating semiconductor devices using preliminary trenches with epitaxial growth