Inventor

KO YONG SUN

KR63 patents

⚠️ This page may combine multiple inventors who share the name “KO YONG SUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KO YONG SUN

SAMSUNG ELECTRONICS CO LTD

Slurry composition, polishing method using the slurry composition and method of forming a gate pattern using the slurry composition

Method of filling contact hole of semiconductor device

Method for drying a wafer and apparatus for performing the same

Method for cleaning damaged layers and polymer residue from semiconductor device

Aqueous cleaning solution for removing contaminants surface of circuit substrate cleaning method using the same

Apparatus for drying semiconductor wafers using isopropyl alcohol

Methods for manufacturing semiconductor devices having chamfered metal silicide layers

Phase change memory devices and methods for fabricating the same

Method of forming a recess channel trench pattern, and fabricating a recess channel transistor

Methods of forming non-volatile memory devices having floating gate electrodes

Method of forming a recess channel trench pattern, and fabricating a recess channel transistor

Platen structure of polishing apparatus for processing semiconductor wafer and method for exchanging polishing pad affixed to the same

Method of manufacturing a semiconductor device

Spot heater and device for cleaning wafer using the same

Semiconductor devices including enlarged contact hole and methods of forming the same

Cleaning solutions for removing contaminants from the surfaces of semiconductor substrates and cleaning methods using the same

Adjustable selectivity etching solutions and methods of etching semiconductor devices using the same

Chemical mechanical polishing methods utilizing pH-adjusted polishing solutions

Substrate processing apparatus

Integrated circuit device

Cleaning solution and method of cleaning a semiconductor device using the same

Substrate processing apparatus and apparatus for manufacturing integrated circuit device

Spot heater and device for cleaning wafer using the same

Semiconductor devices including enlarged contact hole and methods of forming the same

Method of forming a contact hole of a semiconductor device

Methods of forming patterns and capacitors for semiconductor devices using the same

Chemical mechanical polishing method

Etching method for manufacturing semiconductor device

Method and system for planarizing integrated circuit material

Method of fabricating a semiconductor device

Substrate processing apparatus and apparatus for manufacturing integrated circuit device

Methods of fabricating semiconductor devices including support patterns

Phase-change semiconductor device and methods of manufacturing the same

Phase-change semiconductor device and methods of manufacturing the same

Electrode structure and method of manufacturing the same, phase-change memory device having the electrode structure and method of manufacturing the same

Method of manufacturing a flash memory device

Chemical supply system and chemical mixing apparatus

Substrate processing apparatus and substrate processing system including the same

Semiconductor devices including enlarged contact hole and methods of forming the same

Operating method for wet etching system and related system

Thin layer structure and method of forming the same

Method for forming a silicide film of a semiconductor device

Semiconductor device and method of manufacturing the same

Semiconductor devices utilizing spacer structures

Cleaning solution composition and method of cleaning semiconductor device using the same

Polishing method using chemical mechanical slurry composition

Etching solution, method of forming a pattern using the same, method of manufacturing a multiple gate oxide layer using the same and method of manufacturing a flash memory device using the same

Local interconnection method and structure for use in semiconductor device

KIM DONG-KEUN

Chemical mechanical polishing method

BAEK KYOUNG-YUN

Cell structure for a semiconductor memory device and method of fabricating the same