P

Inventor

WEI YI YANG

TW15 patents

Patents

15 patents
US11844226B2Dec 12, 2023

FeRAM with laminated ferroelectric film and method forming same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12356631B2Jul 8, 2025

FeRAM with laminated ferroelectric film and method forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12349366B2Jul 1, 2025

Interface film to mitigate size effect of memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12160995B2Dec 3, 2024

Wakeup free approach to improve the ferroelectricity of FeRAM using a stressor layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12137572B2Nov 5, 2024

Ferroelectric memory device and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12075626B2Aug 27, 2024

Memory window of MFM MOSFET for small cell size

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12035537B2Jul 9, 2024

Interface film to mitigate size effect of memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11967611B2Apr 23, 2024

Multilayer structure, capacitor structure and electronic device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11737280B2Aug 22, 2023

Wakeup free approach to improve the ferroelectricity of FeRAM using a stressor layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11723212B2Aug 8, 2023

Memory window of MFM MOSFET for small cell size

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11665909B2May 30, 2023

FeRAM with laminated ferroelectric film and method forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11393833B2Jul 19, 2022

Ferroelectric random access memory device with seed layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12588271B2Mar 24, 2026

Multi-layer electrode to improve performance of ferroelectric memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11916127B2Feb 27, 2024

Multi-layer electrode to improve performance of ferroelectric memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12069867B2Aug 20, 2024

Ferroelectric random access memory device with seed layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51