Inventor
LEE BI-SHEN
TW30 patents
⚠️ This page may combine multiple inventors who share the name “LEE BI-SHEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
29 patentsUS12127483B2Oct 22, 2024
Doped sidewall spacer/etch stop layer for memory
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11844226B2Dec 12, 2023
FeRAM with laminated ferroelectric film and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11527717B2Dec 13, 2022
Resistive memory cell having a low forming voltage
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11527713B2Dec 13, 2022
Top electrode via with low contact resistance
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11430951B2Aug 30, 2022
Resistive memory cell with switching layer comprising one or more dopants
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11404638B2Aug 2, 2022
Multi-doped data storage structure configured to improve resistive memory cell performance
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12568777B2Mar 3, 2026
Top electrode via with low contact resistance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12408448B2Sep 2, 2025
Deep trench isolation structure and methods for fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12364171B2Jul 15, 2025
Resistive memory cell with switching layer comprising one or more dopants
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12356631B2Jul 8, 2025
FeRAM with laminated ferroelectric film and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12349366B2Jul 1, 2025
Interface film to mitigate size effect of memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12295267B2May 6, 2025
Semiconductor device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12295270B2May 6, 2025
RRAM device with improved performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12239035B2Feb 25, 2025
Resistive memory cell having a low forming voltage
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12232434B2Feb 18, 2025
Multi-doped data storage structure configured to improve resistive memory cell performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12160995B2Dec 3, 2024
Wakeup free approach to improve the ferroelectricity of FeRAM using a stressor layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12137572B2Nov 5, 2024
Ferroelectric memory device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12075626B2Aug 27, 2024
Memory window of MFM MOSFET for small cell size
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12035537B2Jul 9, 2024
Interface film to mitigate size effect of memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11967611B2Apr 23, 2024
Multilayer structure, capacitor structure and electronic device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11895933B2Feb 6, 2024
Resistive memory cell with switching layer comprising one or more dopants
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11737280B2Aug 22, 2023
Wakeup free approach to improve the ferroelectricity of FeRAM using a stressor layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11723212B2Aug 8, 2023
Memory window of MFM MOSFET for small cell size
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11665909B2May 30, 2023
FeRAM with laminated ferroelectric film and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11393833B2Jul 19, 2022
Ferroelectric random access memory device with seed layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11165021B2Nov 2, 2021
RRAM device with improved performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12588271B2Mar 24, 2026
Multi-layer electrode to improve performance of ferroelectric memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11916127B2Feb 27, 2024
Multi-layer electrode to improve performance of ferroelectric memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12069867B2Aug 20, 2024
Ferroelectric random access memory device with seed layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51