Inventor · disambiguated record
Wilbur D. Johnston, Jr.
Also filed as: JOHNSTON JR WILBUR D · JOHNSTON JR WILBUR DEXTER · JOHNSTON WILBUR D JR
17 granted patents·329 citations·filing 1975–1999
95Inventor score
Files withAMERICAN TELEPHONE & TELEGRAPH7BELL TELEPHONE LABOR INC4LUCENT TECHNOLOGIES INC3AGERE SYST OPTOELECTRONICS1AT & T BELL LAB1
Top patents by PatentIndex Score
17 records- 0189US4660208ASemiconductor devices employing Fe-doped MOCVD InP-based layer for current confinementAMERICAN TELEPHONE & TELEGRAPH·Filed 1984·Granted Apr 21, 1987·53 cites·12 claims
- 0280US4098031AMethod for lapping semiconductor materialBELL TELEPHONE LABOR INC·Filed 1977·Granted Jul 4, 1978·18 cites·2 claims
- 0376US4888624ASemiconductor devices employing high resistivity in-based compound group III-IV epitaxial layer for current confinementAMERICAN TELEPHONE & TELEGRAPH·Filed 1988·Granted Dec 19, 1989·44 cites·12 claims
- 0473US4738934AMethod of making indium phosphide devicesAMERICAN TELEPHONE & TELEGRAPH·Filed 1986·Granted Apr 19, 1988·42 cites·26 claims
- 0573US4716130AMOCVD of semi-insulating indium phosphide based compositionsAMERICAN TELEPHONE & TELEGRAPH·Filed 1986·Granted Dec 29, 1987·33 cites·24 claims
- 0665US4999315AMethod of controlling dopant incorporation in high resistivity In-based compound Group III-V epitaxial layersAT & T BELL LAB·Filed 1989·Granted Mar 12, 1991·30 cites·12 claims
- 0762US4074305AGaas layers as contacts to thin film semiconductor layersBELL TELEPHONE LABOR INC·Filed 1976·Granted Feb 14, 1978·12 cites·9 claims
- 0861US4213801AOhmic contact of N-GaAs to electrical conductive substrates by controlled growth of N-GaAs polycrystalline layersBELL TELEPHONE LABOR INC·Filed 1979·Granted Jul 22, 1980·18 cites·17 claims
- 0957US3982265ADevices containing aluminum-V semiconductor and method for makingBELL TELEPHONE LABOR INC·Filed 1975·Granted Sep 21, 1976·15 cites·14 claims
- 1056US6282356B1Optical waveguide device with enhanced stabilityAGERE SYST OPTOELECTRONICS·Filed 1999·Granted Aug 28, 2001·21 cites·26 claims
- 1144US6064782AEdge receptive photodetector devicesLUCENT TECHNOLOGIES INC·Filed 1998·Granted May 16, 2000·11 cites·16 claims
- 1241US6101204AProcess for making integrated laser/modulatorsFiled 1996·Granted Aug 8, 2000·8 cites·10 claims
- 1341US4935382AMethod of making a semiconductor-insulator-semiconductor structureAMERICAN TELEPHONE & TELEGRAPH·Filed 1988·Granted Jun 19, 1990·12 cites·19 claims
- 1439US6211539B1Semi-insulated indium phosphide based compositionsLUCENT TECHNOLOGIES INC·Filed 1994·Granted Apr 3, 2001·5 cites·20 claims
- 1534US4870032AMethod of fabricating single crystal films of cubic group II fluorides on semiconductor componds by molecular beam epitaxyAMERICAN TELEPHONE & TELEGRAPH·Filed 1987·Granted Sep 26, 1989·7 cites·20 claims
- 1630US6172999B1Process for making integrated laser/modulatorsLUCENT TECHNOLOGIES INC·Filed 1999·Granted Jan 9, 2001·0 cites·11 claims
- 1728US4878956ASingle crystal films of cubic group II fluorides on semiconductor compoundsAMERICAN TELEPHONE & TELEGRAPH·Filed 1989·Granted Nov 7, 1989·0 cites·11 claims
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