P

Inventor

CHANG MING-CHENG

DE60 patents
⚠️ This page may combine multiple inventors who share the name “CHANG MING-CHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NANYA TECHNOLOGY CORP

23 patents
US6800895B2Oct 5, 2004

Vertical split gate flash memory cell and method for fabricating the same

NANYA TECHNOLOGY CORP21 citations92
US6794250B2Sep 21, 2004

Vertical split gate flash memory cell and method for fabricating the same

NANYA TECHNOLOGY CORP25 citations92
US6696717B2Feb 24, 2004

Memory cell with vertical transistor and trench capacitor

NANYA TECHNOLOGY CORP20 citations92
US7682902B2Mar 23, 2010

Memory structure and method of making the same

NANYA TECHNOLOGY CORP16 citations82
US7078315B2Jul 18, 2006

Method for eliminating inverse narrow width effects in the fabrication of DRAM device

NANYA TECHNOLOGY CORP8 citations74
US6762099B1Jul 13, 2004

Method for fabricating buried strap out-diffusions of vertical transistor

NANYA TECHNOLOGY CORP11 citations68
US7993985B2Aug 9, 2011

Method for forming a semiconductor device with a single-sided buried strap

NANYA TECHNOLOGY CORP3 citations63
US7109094B2Sep 19, 2006

Method for preventing leakage in shallow trench isolation

NANYA TECHNOLOGY CORP4 citations63
US7056832B2Jun 6, 2006

Deep trench self-alignment process for an active area of a partial vertical cell

NANYA TECHNOLOGY CORP6 citations63
US6969881B2Nov 29, 2005

Partial vertical memory cell and method of fabricating the same

NANYA TECHNOLOGY CORP4 citations63
US6919245B2Jul 19, 2005

Dynamic random access memory cell layout and fabrication method thereof

NANYA TECHNOLOGY CORP2 citations63
US7985998B2Jul 26, 2011

Trench-type semiconductor device structure

NANYA TECHNOLOGY CORP2 citations62
US7211483B2May 1, 2007

Memory device with vertical transistors and deep trench capacitors and method of fabricating the same

NANYA TECHNOLOGY CORP4 citations62
US7009236B2Mar 7, 2006

Memory device with vertical transistors and deep trench capacitors and method of fabricating the same

NANYA TECHNOLOGY CORP4 citations62
US6929996B2Aug 16, 2005

Corner rounding process for partial vertical transistor

NANYA TECHNOLOGY CORP2 citations62
US6801462B2Oct 5, 2004

Device and method for detecting alignment of deep trench capacitors and word lines in DRAM devices

NANYA TECHNOLOGY CORP5 citations62
US6909136B2Jun 21, 2005

Trench-capacitor DRAM cell having a folded gate conductor

NANYA TECHNOLOGY CORP3 citations60
US6788598B2Sep 7, 2004

Test key for detecting overlap between active area and deep trench capacitor of a DRAM and detection method thereof

NANYA TECHNOLOGY CORP3 citations60
US6821843B1Nov 23, 2004

Fabrication method for an array area and a support area of a dynamic random access memory

NANYA TECHNOLOGY CORP6 citations57
US7642142B2Jan 5, 2010

Method for manufacturing a flash memory device with cavities in upper portions of conductors

NANYA TECHNOLOGY CORP0 citations52
US7408215B2Aug 5, 2008

Dynamic random access memory

NANYA TECHNOLOGY CORP0 citations52
US7033886B2Apr 25, 2006

Partial vertical memory cell and method of fabricating the same

NANYA TECHNOLOGY CORP0 citations52
US6958521B2Oct 25, 2005

Shallow trench isolation structure

NANYA TECHNOLOGY CORP0 citations52

GLOBALFOUNDRIES INC

5 patents

NOVACORP INC

5 patents

(unassigned)

4 patents

CHANG MING CHENG

3 patents

CHUANG YING CHENG

2 patents

CHANG MING-CHENG

2 patents

LIAO WEI-MING

1 patent

EXCELSIOR MEDICAL CO LTD

1 patent

HON HAI PREC IND CO LTD

1 patent

INER AEC EXECUTIVE YUAN

1 patent

NANYA TECHNOLOGIES CORP

1 patent

GLOBALFOUNDRIES US INC

1 patent

Showing the top 50 of 60 patents by PatentIndex Score.