P

Inventor

SMITH ELLIOT JOHN

US32 patents
⚠️ This page may combine multiple inventors who share the name “SMITH ELLIOT JOHN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GLOBALFOUNDRIES INC

27 patents
US10483154B1Nov 19, 2019

Front-end-of-line device structure and method of forming such a front-end-of-line device structure

GLOBALFOUNDRIES INC399 citations97
US9793372B1Oct 17, 2017

Integrated circuit including a dummy gate structure and method for the formation thereof

GLOBALFOUNDRIES INC14 citations84
US9590118B1Mar 7, 2017

Wafer with SOI structure having a buried insulating multilayer structure and semiconductor device structure

GLOBALFOUNDRIES INC14 citations84
US9847347B1Dec 19, 2017

Semiconductor structure including a first transistor at a semiconductor-on-insulator region and a second transistor at a bulk region and method for the formation thereof

GLOBALFOUNDRIES INC8 citations82
US9608112B2Mar 28, 2017

BULEX contacts in advanced FDSOI techniques

GLOBALFOUNDRIES INC12 citations82
US10319827B2Jun 11, 2019

High voltage transistor using buried insulating layer as gate dielectric

GLOBALFOUNDRIES INC3 citations73
US10283365B1May 7, 2019

Technique and related semiconductor devices based on crystalline semiconductor material formed on the basis of deposited amorphous semiconductor material

GLOBALFOUNDRIES INC2 citations73
US10177163B1Jan 8, 2019

SOI-based floating gate memory cell

GLOBALFOUNDRIES INC5 citations73
US10157996B2Dec 18, 2018

Methods for forming integrated circuits that include a dummy gate structure

GLOBALFOUNDRIES INC2 citations73
US9685336B1Jun 20, 2017

Process monitoring for gate cut mask

GLOBALFOUNDRIES INC5 citations73
US9953876B1Apr 24, 2018

Method of forming a semiconductor device structure and semiconductor device structure

GLOBALFOUNDRIES INC2 citations72
US9698179B2Jul 4, 2017

Capacitor structure and method of forming a capacitor structure

GLOBALFOUNDRIES INC4 citations72
US10396084B1Aug 27, 2019

Semiconductor devices including self-aligned active regions for planar transistor architecture

GLOBALFOUNDRIES INC4 citations71
US9514942B1Dec 6, 2016

Method of forming a gate mask for fabricating a structure of gate lines

GLOBALFOUNDRIES INC5 citations71
US10199259B1Feb 5, 2019

Technique for defining active regions of semiconductor devices with reduced lithography effort

GLOBALFOUNDRIES INC4 citations70
US9633857B1Apr 25, 2017

Semiconductor structure including a trench capping layer and method for the formation thereof

GLOBALFOUNDRIES INC3 citations68
US10707330B2Jul 7, 2020

Semiconductor device with interconnect to source/drain

GLOBALFOUNDRIES INC1 citations62
US10593674B1Mar 17, 2020

Deep fence isolation for logic cells

GLOBALFOUNDRIES INC1 citations62
US10559490B1Feb 11, 2020

Dual-depth STI cavity extension and method of production thereof

GLOBALFOUNDRIES INC1 citations62
US10522555B2Dec 31, 2019

Semiconductor devices including Si/Ge active regions with different Ge concentrations

GLOBALFOUNDRIES INC0 citations52
US10340359B2Jul 2, 2019

Gate structure with dual width electrode layer

GLOBALFOUNDRIES INC0 citations52
US10304683B2May 28, 2019

Early gate silicidation in transistor elements

GLOBALFOUNDRIES INC0 citations52
US9923076B2Mar 20, 2018

Gate patterning for AC and DC performance boost

GLOBALFOUNDRIES INC0 citations52
US9768084B1Sep 19, 2017

Inline monitoring of transistor-to-transistor critical dimension

GLOBALFOUNDRIES INC1 citations52
US10811433B2Oct 20, 2020

High-voltage transistor device with thick gate insulation layers

GLOBALFOUNDRIES INC0 citations50
US10418380B2Sep 17, 2019

High-voltage transistor device with thick gate insulation layers

GLOBALFOUNDRIES INC0 citations50
US10103224B2Oct 16, 2018

Semiconductor structure including a trench capping layer

GLOBALFOUNDRIES INC0 citations47

Continental automotive systems inc

2 patents

GLOBALFOUNDRIES US INC

2 patents

SMITH ELLIOT JOHN

1 patent