Inventor

LEE JUNG-HYEON

KR19 patents

⚠️ This page may combine multiple inventors who share the name “LEE JUNG-HYEON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LEE JUNG-HYEON

SAMSUNG ELECTRONICS CO LTD

Semiconductor memory device having self-aligned contacts and method of fabricating the same

Semiconductor memory device having storage node electrodes offset from each other

Method for forming fine patterns of a semiconductor device using a double patterning process

Method of forming self-aligned contact pads of non-straight type semiconductor memory device

Phase shifting mask for manufacturing semiconductor device and method of fabricating the same

Semiconductor device having self-aligned contact and method of fabricating the same

Method for manufacturing semiconductor device with contact body extended in direction of bit line

Semiconductor memory device having self-aligned contacts and method of fabricating the same

Method of forming fine patterns of semiconductor device by using double patterning process which uses acid diffusion

Method of manufacturing a capacitor and method of manufacturing a dynamic random access memory device using the same

Semiconductor memory device having high electrical performance and mask and photolithography friendliness

Semiconductor memory device having high electrical performance and mask and photolithography friendliness

Semiconductor device having anti-reflective cap and spacer, method of manufacturing the same, and method of manufacturing photoresist pattern using the same

Capacitance compensation for topological measurements in a semiconductor device

Method of forming a fine pattern of a semiconductor device using a resist reflow measurement key

Phase shifting mask for manufacturing semiconductor device and method of fabricating the same

DRAM devices having an increased density layout

Optical element holder and projection exposure apparatus having the same

KANG YOOL

Method of forming fine patterns of semiconductor device by using double patterning process which uses acid diffusion