Inventor
YOSHIMURA HISAO
JP10 patents
⚠️ This page may combine multiple inventors who share the name “YOSHIMURA HISAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
7 patentsUS6037605AMar 14, 2000
Semiconductor device and method of manufacturing the same
TOSHIBA KK101 citations96
US5506168AApr 9, 1996
Method for manufacturing semiconductor device
TOSHIBA KK89 citations96
US6869867B2Mar 22, 2005
Semiconductor device comprising metal silicide films formed to cover gate electrode and source-drain diffusion layers and method of manufacturing the same wherein the silicide on gate is thicker than on source-drain
TOSHIBA KK55 citations94
US5677229AOct 14, 1997
Method for manufacturing semiconductor device isolation region
TOSHIBA KK22 citations92
US5489795AFeb 6, 1996
Semiconductor integrated circuit device having double well structure
TOSHIBA KK16 citations73
US7638432B2Dec 29, 2009
Semiconductor device comprising metal silicide films formed to cover gate electrode and source-drain diffusion layers and method of manufacturing the same
TOSHIBA KK1 citations61
US7220672B2May 22, 2007
Semiconductor device comprising metal silicide films formed to cover gate electrode and source-drain diffusion layers and method of manufacturing the same
TOSHIBA KK2 citations61