Inventor
LEE PEI-ING
TW28 patents
⚠️ This page may combine multiple inventors who share the name “LEE PEI-ING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NANYA TECHNOLOGY CORP
26 patentsUS6734066B2May 11, 2004
Method for fabricating split gate flash memory cell
NANYA TECHNOLOGY CORP62 citations96
US6448150B1Sep 10, 2002
Method for forming shallow trench isolation in the integrated circuit
NANYA TECHNOLOGY CORP71 citations95
US7316952B2Jan 8, 2008
Method for forming a memory device with a recessed gate
NANYA TECHNOLOGY CORP19 citations92
US6100117AAug 8, 2000
Method for manufacturing DRAM having a redundancy circuit region
NANYA TECHNOLOGY CORP27 citations91
US6368912B1Apr 9, 2002
Method of fabricating an isolation structure between a vertical transistor and a deep trench capacitor
NANYA TECHNOLOGY CORP27 citations88
US7679137B2Mar 16, 2010
Method for fabricating recessed gate MOS transistor device
NANYA TECHNOLOGY CORP8 citations84
US7682902B2Mar 23, 2010
Memory structure and method of making the same
NANYA TECHNOLOGY CORP16 citations82
US7419882B2Sep 2, 2008
Alignment mark and alignment method for the fabrication of trench-capacitor dram devices
NANYA TECHNOLOGY CORP13 citations82
US7541244B2Jun 2, 2009
Semiconductor device having a trench gate and method of fabricating the same
NANYA TECHNOLOGY CORP6 citations74
US7429509B2Sep 30, 2008
Method for forming a semiconductor device
NANYA TECHNOLOGY CORP7 citations74
US7316978B2Jan 8, 2008
Method for forming recesses
NANYA TECHNOLOGY CORP8 citations73
US6403483B1Jun 11, 2002
Shallow trench isolation having an etching stop layer and method for fabricating same
NANYA TECHNOLOGY CORP9 citations70
US7932555B2Apr 26, 2011
Transistor structure and method of making the same
NANYA TECHNOLOGY CORP4 citations63
US7642590B2Jan 5, 2010
Semiconductor device and method for making the same
NANYA TECHNOLOGY CORP2 citations63
US7358133B2Apr 15, 2008
Semiconductor device and method for making the same
NANYA TECHNOLOGY CORP3 citations63
US7316953B2Jan 8, 2008
Method for forming a recessed gate with word lines
NANYA TECHNOLOGY CORP6 citations63
US7005698B2Feb 28, 2006
Split gate flash memory cell
NANYA TECHNOLOGY CORP3 citations63
US7795090B2Sep 14, 2010
Electrical device and method for fabricating the same
NANYA TECHNOLOGY CORP3 citations62
US7563686B2Jul 21, 2009
Method for forming a memory device with a recessed gate
NANYA TECHNOLOGY CORP4 citations62
US7446355B2Nov 4, 2008
Electrical device and method for fabricating the same
NANYA TECHNOLOGY CORP2 citations62
US7179748B1Feb 20, 2007
Method for forming recesses
NANYA TECHNOLOGY CORP5 citations62
US7723181B2May 25, 2010
Overlay alignment mark and alignment method for the fabrication of trench-capacitor dram devices
NANYA TECHNOLOGY CORP6 citations61
US7622770B2Nov 24, 2009
Semiconductor device having a trench gate and method of fabricating the same
NANYA TECHNOLOGY CORP0 citations52
US7592233B2Sep 22, 2009
Method for forming a memory device with a recessed gate
NANYA TECHNOLOGY CORP0 citations52
US6794270B2Sep 21, 2004
Method for shallow trench isolation fabrication and partial oxide layer removal
NANYA TECHNOLOGY CORP1 citations48
US8044449B2Oct 25, 2011
Memory device with a length-controllable channel
NANYA TECHNOLOGY CORP0 citations40