Inventor
CHENG CHIEN-LI
TW17 patents
⚠️ This page may combine multiple inventors who share the name “CHENG CHIEN-LI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NANYA TECHNOLOGY CORP
12 patentsUS7679137B2Mar 16, 2010
Method for fabricating recessed gate MOS transistor device
NANYA TECHNOLOGY CORP8 citations84
US7316978B2Jan 8, 2008
Method for forming recesses
NANYA TECHNOLOGY CORP8 citations73
US7795090B2Sep 14, 2010
Electrical device and method for fabricating the same
NANYA TECHNOLOGY CORP3 citations62
US7638391B2Dec 29, 2009
Semiconductor memory device and fabrication method thereof
NANYA TECHNOLOGY CORP3 citations62
US7563686B2Jul 21, 2009
Method for forming a memory device with a recessed gate
NANYA TECHNOLOGY CORP4 citations62
US7446355B2Nov 4, 2008
Electrical device and method for fabricating the same
NANYA TECHNOLOGY CORP2 citations62
US7179748B1Feb 20, 2007
Method for forming recesses
NANYA TECHNOLOGY CORP5 citations62
US7473598B2Jan 6, 2009
Method for forming stack capacitor
NANYA TECHNOLOGY CORP2 citations57
US7592233B2Sep 22, 2009
Method for forming a memory device with a recessed gate
NANYA TECHNOLOGY CORP0 citations52
US7923325B2Apr 12, 2011
Deep trench device with single sided connecting structure and fabrication method thereof
NANYA TECHNOLOGY CORP0 citations51
US7619271B2Nov 17, 2009
Deep trench device with single sided connecting structure and fabrication method thereof
NANYA TECHNOLOGY CORP0 citations51
US7535045B2May 19, 2009
Checkerboard deep trench dynamic random access memory cell array layout
NANYA TECHNOLOGY CORP0 citations51
TAIWAN SEMICONDUCTOR MFG
4 patentsUS6518148B1Feb 11, 2003
Method for protecting STI structures with low etching rate liners
TAIWAN SEMICONDUCTOR MFG48 citations91
US7897501B2Mar 1, 2011
Method of fabricating a field-effect transistor having robust sidewall spacers
TAIWAN SEMICONDUCTOR MFG9 citations83
US7190033B2Mar 13, 2007
CMOS device and method of manufacture
TAIWAN SEMICONDUCTOR MFG7 citations73
US7382028B2Jun 3, 2008
Method for forming silicide and semiconductor device formed thereby
TAIWAN SEMICONDUCTOR MFG2 citations63