Inventor
FUJISAWA HIDEO
JP30 patents
⚠️ This page may combine multiple inventors who share the name “FUJISAWA HIDEO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI CHEM CORP
25 patentsUS11038024B2Jun 15, 2021
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
MITSUBISHI CHEM CORP4 citations83
US10475887B2Nov 12, 2019
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
MITSUBISHI CHEM CORP5 citations83
US10301743B2May 28, 2019
GaN single crystal and method for manufacturing GaN single crystal
MITSUBISHI CHEM CORP5 citations83
US10066319B2Sep 4, 2018
GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor device
MITSUBISHI CHEM CORP6 citations82
US9518337B2Dec 13, 2016
Method for producing nitride crystal and nitride crystal
MITSUBISHI CHEM CORP4 citations82
US9096945B2Aug 4, 2015
Method for producing nitride crystal and nitride crystal
MITSUBISHI CHEM CORP4 citations82
US11664428B2May 30, 2023
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
MITSUBISHI CHEM CORP1 citations72
US11031475B2Jun 8, 2021
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
MITSUBISHI CHEM CORP3 citations72
US10903072B2Jan 26, 2021
Conductive C-plane GaN substrate
MITSUBISHI CHEM CORP1 citations72
US10796904B2Oct 6, 2020
Conductive C-plane GaN substrate
MITSUBISHI CHEM CORP1 citations72
US10734485B2Aug 4, 2020
Gallium nitride substrate and manufacturing method of nitride semiconductor crystal
MITSUBISHI CHEM CORP1 citations71
US10655244B2May 19, 2020
GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor device
MITSUBISHI CHEM CORP2 citations71
US12107129B2Oct 1, 2024
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
MITSUBISHI CHEM CORP0 citations62
US11810782B2Nov 7, 2023
Conductive C-plane GaN substrate
MITSUBISHI CHEM CORP0 citations62
US11591715B2Feb 28, 2023
GaN single crystal and method for manufacturing GaN single crystal
MITSUBISHI CHEM CORP0 citations62
US11404268B2Aug 2, 2022
Method for growing GaN crystal and c-plane GaN substrate
MITSUBISHI CHEM CORP0 citations62
US11001940B2May 11, 2021
GaN single crystal and method for manufacturing GaN single crystal
MITSUBISHI CHEM CORP0 citations62
US10720326B2Jul 21, 2020
Method for growing GaN crystal and C-plane GaN substrate
MITSUBISHI CHEM CORP1 citations62
US11670687B2Jun 6, 2023
Gallium nitride substrate and manufacturing method of nitride semiconductor crystal
MITSUBISHI CHEM CORP0 citations61
US11162190B2Nov 2, 2021
Method for producing nitride crystal and nitride crystal
MITSUBISHI CHEM CORP0 citations61
US10995421B2May 4, 2021
Crystal of nitride of group-13 metal on periodic table, and method for producing the same
MITSUBISHI CHEM CORP0 citations61
US9673046B2Jun 6, 2017
Gallium nitride substrate and manufacturing method of nitride semiconductor crystal
MITSUBISHI CHEM CORP1 citations61
US10526726B2Jan 7, 2020
Method for producing nitride crystal and nitride crystal
MITSUBISHI CHEM CORP0 citations51
US10309038B2Jun 4, 2019
Crystal of nitride of group-13 metal on periodic table, and method for producing the same
MITSUBISHI CHEM CORP0 citations51
US9890474B2Feb 13, 2018
Crystal of nitride of group-13 metal on periodic table, and method for producing the same
MITSUBISHI CHEM CORP0 citations51