Inventor
MOCHIZUKI TAE
JP15 patents
Patents
15 patentsUS11038024B2Jun 15, 2021
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
MITSUBISHI CHEM CORP4 citations83
US10475887B2Nov 12, 2019
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
MITSUBISHI CHEM CORP5 citations83
US10301743B2May 28, 2019
GaN single crystal and method for manufacturing GaN single crystal
MITSUBISHI CHEM CORP5 citations83
US11987903B2May 21, 2024
N-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconductor device production method
MITSUBISHI CHEM CORP3 citations73
US11664428B2May 30, 2023
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
MITSUBISHI CHEM CORP1 citations72
US11031475B2Jun 8, 2021
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
MITSUBISHI CHEM CORP3 citations72
US10903072B2Jan 26, 2021
Conductive C-plane GaN substrate
MITSUBISHI CHEM CORP1 citations72
US10796904B2Oct 6, 2020
Conductive C-plane GaN substrate
MITSUBISHI CHEM CORP1 citations72
US12351943B2Jul 8, 2025
n-Type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconductor device production method
MITSUBISHI CHEM CORP1 citations63
US12107129B2Oct 1, 2024
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
MITSUBISHI CHEM CORP0 citations62
US11810782B2Nov 7, 2023
Conductive C-plane GaN substrate
MITSUBISHI CHEM CORP0 citations62
US11591715B2Feb 28, 2023
GaN single crystal and method for manufacturing GaN single crystal
MITSUBISHI CHEM CORP0 citations62
US11404268B2Aug 2, 2022
Method for growing GaN crystal and c-plane GaN substrate
MITSUBISHI CHEM CORP0 citations62
US11001940B2May 11, 2021
GaN single crystal and method for manufacturing GaN single crystal
MITSUBISHI CHEM CORP0 citations62
US10720326B2Jul 21, 2020
Method for growing GaN crystal and C-plane GaN substrate
MITSUBISHI CHEM CORP1 citations62