Inventor
NAMITA HIDEO
JP12 patents
Patents
12 patentsUS10301743B2May 28, 2019
GaN single crystal and method for manufacturing GaN single crystal
MITSUBISHI CHEM CORP5 citations83
US10903072B2Jan 26, 2021
Conductive C-plane GaN substrate
MITSUBISHI CHEM CORP1 citations72
US10796904B2Oct 6, 2020
Conductive C-plane GaN substrate
MITSUBISHI CHEM CORP1 citations72
US11810782B2Nov 7, 2023
Conductive C-plane GaN substrate
MITSUBISHI CHEM CORP0 citations62
US11591715B2Feb 28, 2023
GaN single crystal and method for manufacturing GaN single crystal
MITSUBISHI CHEM CORP0 citations62
US11404268B2Aug 2, 2022
Method for growing GaN crystal and c-plane GaN substrate
MITSUBISHI CHEM CORP0 citations62
US11001940B2May 11, 2021
GaN single crystal and method for manufacturing GaN single crystal
MITSUBISHI CHEM CORP0 citations62
US10720326B2Jul 21, 2020
Method for growing GaN crystal and C-plane GaN substrate
MITSUBISHI CHEM CORP1 citations62
US11236439B2Feb 1, 2022
Non-polar or semi-polar GaN wafer
MITSUBISHI CHEM CORP0 citations61
US10995421B2May 4, 2021
Crystal of nitride of group-13 metal on periodic table, and method for producing the same
MITSUBISHI CHEM CORP0 citations61
US10309038B2Jun 4, 2019
Crystal of nitride of group-13 metal on periodic table, and method for producing the same
MITSUBISHI CHEM CORP0 citations51
US9890474B2Feb 13, 2018
Crystal of nitride of group-13 metal on periodic table, and method for producing the same
MITSUBISHI CHEM CORP0 citations51