P

Inventor

QIN CHANGLIANG

CN11 patents
⚠️ This page may combine multiple inventors who share the name “QIN CHANGLIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

QIN CHANGLIANG

4 patents
US8802533B1Aug 12, 2014

Semiconductor device and method of manufacturing the same

QIN CHANGLIANG8 citations82
US8716090B2May 6, 2014

Semiconductor device manufacturing method

QIN CHANGLIANG11 citations82
US8841190B2Sep 23, 2014

MOS device for making the source/drain region closer to the channel region and method of manufacturing the same

QIN CHANGLIANG4 citations71
US9006057B2Apr 14, 2015

Method of manufacturing semiconductor device

QIN CHANGLIANG3 citations60

YIN HUAXIANG

3 patents
US8652891B1Feb 18, 2014

Semiconductor device and method of manufacturing the same

YIN HUAXIANG10 citations83
US9548387B2Jan 17, 2017

Semiconductor device and method of manufacturing the same

YIN HUAXIANG1 citations51
US9281398B2Mar 8, 2016

Semiconductor structure and method for manufacturing the same

YIN HUAXIANG0 citations51

INST OF MICROELECTRONICS CAS

2 patents
US9892912B2Feb 13, 2018

Method of manufacturing stacked nanowire MOS transistor

INST OF MICROELECTRONICS CAS7 citations83
US9385212B2Jul 5, 2016

Method for manufacturing semiconductor device

INST OF MICROELECTRONICS CAS3 citations72

INST OF MICROELECTROICS CHINESE ACADEMY OF SCIENCES

1 patent
US9337102B2May 10, 2016

Method for manufacturing semiconductor device including doping epitaxial source drain extension regions

INST OF MICROELECTROICS CHINESE ACADEMY OF SCIENCES9 citations79

YIN HAIZHOU

1 patent
US9691878B2Jun 27, 2017

Method of manufacturing MOSFET

YIN HAIZHOU0 citations41