Inventor · disambiguated record
Karthik Padmanabhan
Also filed as: PADMANABHAN KARTHIK · PADMANABHAN KARTHIK RAMASWAMY
26 granted patents·4 pending applications·97 citations·filing 2013–2024
95Inventor score
Files withALPHA & OMEGA SEMICONDUCTOR15ALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD10ALPHA & OMEGA SEMICONDUCTOR INT LP2HU JUN1PADMANABHAN KARTHIK1
Top patents by PatentIndex Score
30 records- 0198US9312381B1Lateral super-junction MOSFET device and termination structureALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Apr 12, 2016·17 cites·20 claims
- 0295US9171949B1Semiconductor device including superjunction structure formed using angled implant processALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Oct 27, 2015·17 cites·14 claims
- 0394US8710585B1High voltage fast recovery trench diodeHU JUN·Filed 2013·Granted Apr 29, 2014·16 cites·21 claims
- 0492US10931276B1Combined IGBT and superjunction MOSFET device with tuned switching speedALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD·Filed 2019·Granted Feb 23, 2021·6 cites·14 claims
- 0590US8907414B2High voltage fast recovery trench diodeALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Dec 9, 2014·8 cites·21 claims
- 0689US9450045B1Method for forming lateral super-junction structureALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Sep 20, 2016·6 cites·12 claims
- 0786US9530885B2Normally on high voltage switchALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Dec 27, 2016·4 cites·20 claims
- 0886US9082790B2Normally on high voltage switchALPHA & OMEGA SEMICONDUCTOR·Filed 2013·Granted Jul 14, 2015·6 cites·11 claims
- 0985US10580868B2Super-junction corner and termination structure with improved breakdown and robustnessALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD·Filed 2018·Granted Mar 3, 2020·3 cites·12 claims
- 1081US11031465B2Semiconductor device incorporating epitaxial layer field stop zoneALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD·Filed 2019·Granted Jun 8, 2021·2 cites·10 claims
- 1181US9991380B2Lateral super-junction MOSFET device and termination structureALPHA & OMEGA SEMICONDUCTOR·Filed 2017·Granted Jun 5, 2018·2 cites·22 claims
- 1280US9397154B2Termination design by metal strapping guard ring trenches shorted to a body region to shrink termination areaALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Jul 19, 2016·2 cites·20 claims
- 1378US10644102B2SGT superjunction MOSFET structureALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD·Filed 2017·Granted May 5, 2020·2 cites·25 claims
- 1477US10446679B2Method for forming a lateral super-junction MOSFET device and termination structureALPHA & OMEGA SEMICONDUCTOR·Filed 2019·Granted Oct 15, 2019·1 cites·20 claims
- 1575US9153653B2Termination design by metal strapping guard ring trenches shorted to a body region to shrink termination areaPADMANABHAN KARTHIK·Filed 2013·Granted Oct 6, 2015·4 cites·20 claims
- 1672US11508819B2Method for forming super-junction corner and termination structure with graded sidewallsALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD·Filed 2021·Granted Nov 22, 2022·0 cites·11 claims
- 1772US9595609B2Semiconductor device including superjunction structure formed using angled implant processALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Mar 14, 2017·1 cites·8 claims
- 1868US11749716B2Semiconductor device incorporating epitaxial layer field stop zoneALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD·Filed 2021·Granted Sep 5, 2023·0 cites·13 claims
- 1967US11756993B2IGBT light load efficiencyALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD·Filed 2022·Granted Sep 12, 2023·0 cites·16 claims
- 2066US11038022B2Super-junction corner and termination structure with graded sidewallsALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD·Filed 2020·Granted Jun 15, 2021·0 cites·15 claims
- 2165US10755931B2Semiconductor device and method of forming including superjunction structure formed using angled implant processALPHA & OMEGA SEMICONDUCTOR·Filed 2019·Granted Aug 25, 2020·0 cites·13 claims
- 2262US10243072B2Method for forming a lateral super-junction MOSFET device and termination structureALPHA & OMEGA SEMICONDUCTOR·Filed 2018·Granted Mar 26, 2019·0 cites·20 claims
- 2361US2025261413A1Trench termination structure and method of making thereofALPHA & OMEGA SEMICONDUCTOR INT LP·Filed 2024·Application pending·0 cites
- 2460US11342410B2Improving IGBT light load efficiencyALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD·Filed 2019·Granted May 24, 2022·0 cites·21 claims
- 2559US10276387B2Semiconductor device including superjunction structure formed using angled implant processALPHA & OMEGA SEMICONDUCTOR·Filed 2017·Granted Apr 30, 2019·0 cites·11 claims
- 2656US9722073B2Lateral super-junction MOSFET device and termination structureALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Aug 1, 2017·0 cites·22 claims
- 2755US2024332287A1Dual p-body dose reverse-conducting (dpd-rc) igbt structureALPHA & OMEGA SEMICONDUCTOR INT LP·Filed 2023·Application pending·0 cites
- 2852US2019006461A1Semiconductor device incorporating epitaxial layer field stop zoneALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD·Filed 2017·Application pending·0 cites
- 2950US2015203924A1Diagnostic tools for herbicide resistance in plantsPURDUE RESEARCH FOUNDATION·Filed 2014·Application pending·0 cites
- 3046US9508805B2Termination design for nanotube MOSFETALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Nov 29, 2016·0 cites·22 claims
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