P

Inventor

CHANG MU-TIEN

US57 patents
⚠️ This page may combine multiple inventors who share the name “CHANG MU-TIEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

47 patents
US10268541B2Apr 23, 2019

DRAM assist error correction mechanism for DDR SDRAM interface

SAMSUNG ELECTRONICS CO LTD18 citations94
US11079936B2Aug 3, 2021

3-D stacked memory with reconfigurable compute logic

SAMSUNG ELECTRONICS CO LTD12 citations84
US10977118B2Apr 13, 2021

DRAM assist error correction mechanism for DDR SDRAM interface

SAMSUNG ELECTRONICS CO LTD5 citations84
US10866900B2Dec 15, 2020

ISA extension for high-bandwidth memory

SAMSUNG ELECTRONICS CO LTD5 citations84
US10762000B2Sep 1, 2020

Techniques to reduce read-modify-write overhead in hybrid DRAM/NAND memory

SAMSUNG ELECTRONICS CO LTD7 citations84
US10437482B2Oct 8, 2019

Coordinated near-far memory controller for process-in-HBM

SAMSUNG ELECTRONICS CO LTD10 citations84
US10394648B2Aug 27, 2019

Method to deliver in-DRAM ECC information through DDR bus

SAMSUNG ELECTRONICS CO LTD4 citations84
US9846650B2Dec 19, 2017

Tail response time reduction method for SSD

SAMSUNG ELECTRONICS CO LTD7 citations84
US9830086B2Nov 28, 2017

Hybrid memory controller for arbitrating access to volatile and non-volatile memories in a hybrid memory group

SAMSUNG ELECTRONICS CO LTD6 citations84
US9983821B2May 29, 2018

Optimized hopscotch multiple hash tables for efficient memory in-line deduplication application

SAMSUNG ELECTRONICS CO LTD11 citations83
US10180906B2Jan 15, 2019

HBM with in-memory cache manager

SAMSUNG ELECTRONICS CO LTD18 citations81
US11625296B2Apr 11, 2023

DRAM assist error correction mechanism for DDR SDRAM interface

SAMSUNG ELECTRONICS CO LTD2 citations73
US11556476B2Jan 17, 2023

ISA extension for high-bandwidth memory

SAMSUNG ELECTRONICS CO LTD2 citations73
US11175853B2Nov 16, 2021

Systems and methods for write and flush support in hybrid memory

SAMSUNG ELECTRONICS CO LTD3 citations73
US11010242B2May 18, 2021

DRAM assist error correction mechanism for DDR SDRAM interface

SAMSUNG ELECTRONICS CO LTD2 citations73
US10908993B2Feb 2, 2021

Method to deliver in-DRAM ECC information through DDR bus

SAMSUNG ELECTRONICS CO LTD1 citations73
US10795764B2Oct 6, 2020

Method to deliver in-DRAM ECC information through DDR bus

SAMSUNG ELECTRONICS CO LTD1 citations73
US10592114B2Mar 17, 2020

Coordinated in-module RAS features for synchronous DDR compatible memory

SAMSUNG ELECTRONICS CO LTD2 citations73
US10347306B2Jul 9, 2019

Self-optimized power management for DDR-compatible memory systems

SAMSUNG ELECTRONICS CO LTD6 citations73
US10282294B2May 7, 2019

Mitigating DRAM cache metadata access overhead with SRAM metadata cache and bloom filter

SAMSUNG ELECTRONICS CO LTD6 citations73
US9837135B2Dec 5, 2017

Methods for addressing high capacity SDRAM-like memory without increasing pin cost

SAMSUNG ELECTRONICS CO LTD2 citations73
US10496543B2Dec 3, 2019

Virtual bucket multiple hash tables for efficient memory in-line deduplication application

SAMSUNG ELECTRONICS CO LTD3 citations72
US12248402B2Mar 11, 2025

Bandwidth boosted stacked memory

SAMSUNG ELECTRONICS CO LTD0 citations63
US11940922B2Mar 26, 2024

ISA extension for high-bandwidth memory

SAMSUNG ELECTRONICS CO LTD0 citations63
US11568920B2Jan 31, 2023

Dual row-column major dram

SAMSUNG ELECTRONICS CO LTD0 citations63
US11513965B2Nov 29, 2022

Bandwidth boosted stacked memory

SAMSUNG ELECTRONICS CO LTD0 citations63
US10915451B2Feb 9, 2021

Bandwidth boosted stacked memory

SAMSUNG ELECTRONICS CO LTD0 citations63
US12468445B2Nov 11, 2025

Coordinated in-module RAS features for synchronous DDR compatible memory

SAMSUNG ELECTRONICS CO LTD0 citations62
US12242344B2Mar 4, 2025

DRAM assist error correction mechanism for DDR SDRAM interface

SAMSUNG ELECTRONICS CO LTD0 citations62
US12189546B2Jan 7, 2025

Asynchronous communication protocol compatible with synchronous DDR protocol

SAMSUNG ELECTRONICS CO LTD0 citations62
US12032828B2Jul 9, 2024

Coordinated in-module RAS features for synchronous DDR compatible memory

SAMSUNG ELECTRONICS CO LTD0 citations62
US11397698B2Jul 26, 2022

Asynchronous communication protocol compatible with synchronous DDR protocol

SAMSUNG ELECTRONICS CO LTD0 citations62
US11294571B2Apr 5, 2022

Coordinated in-module RAS features for synchronous DDR compatible memory

SAMSUNG ELECTRONICS CO LTD0 citations62
US11029879B2Jun 8, 2021

Page size synchronization and page size aware scheduling method for non-volatile memory dual in-line memory module (NVDIMM) over memory channel

SAMSUNG ELECTRONICS CO LTD0 citations62
US10810144B2Oct 20, 2020

System and method for operating a DRR-compatible asynchronous memory module

SAMSUNG ELECTRONICS CO LTD1 citations62
US12197726B2Jan 14, 2025

3D-stacked memory with reconfigurable compute logic

SAMSUNG ELECTRONICS CO LTD0 citations61
US11789610B2Oct 17, 2023

3D-stacked memory with reconfigurable compute logic

SAMSUNG ELECTRONICS CO LTD0 citations61
US10318434B2Jun 11, 2019

Optimized hopscotch multiple hash tables for efficient memory in-line deduplication application

SAMSUNG ELECTRONICS CO LTD1 citations61
US10929026B2Feb 23, 2021

Multi-cell structure for non-volatile resistive memory

SAMSUNG ELECTRONICS CO LTD0 citations52
US10621119B2Apr 14, 2020

Asynchronous communication protocol compatible with synchronous DDR protocol

SAMSUNG ELECTRONICS CO LTD0 citations52
US10552256B2Feb 4, 2020

Morphable ECC encoder/decoder for NVDIMM over DDR channel

SAMSUNG ELECTRONICS CO LTD0 citations52
US10504572B2Dec 10, 2019

Methods for addressing high capacity SDRAM-like memory without increasing pin cost

SAMSUNG ELECTRONICS CO LTD0 citations52
US10394719B2Aug 27, 2019

Refresh aware replacement policy for volatile memory cache

SAMSUNG ELECTRONICS CO LTD0 citations52
US10114560B2Oct 30, 2018

Hybrid memory controller with command buffer for arbitrating access to volatile and non-volatile memories in a hybrid memory group

SAMSUNG ELECTRONICS CO LTD0 citations52
US10049717B2Aug 14, 2018

Wear leveling for storage or memory device

SAMSUNG ELECTRONICS CO LTD0 citations52
US9971511B2May 15, 2018

Hybrid memory module and transaction-based memory interface

SAMSUNG ELECTRONICS CO LTD1 citations52
US9904635B2Feb 27, 2018

High performance transaction-based memory systems

SAMSUNG ELECTRONICS CO LTD1 citations52

ZHENG HONGZHONG

1 patent

NIU DIMIN

1 patent

CHANG MU-TIEN

1 patent

Showing the top 50 of 57 patents by PatentIndex Score.