Inventor
CHANG MU-TIEN
US57 patents
⚠️ This page may combine multiple inventors who share the name “CHANG MU-TIEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
47 patentsUS10268541B2Apr 23, 2019
DRAM assist error correction mechanism for DDR SDRAM interface
SAMSUNG ELECTRONICS CO LTD18 citations94
US11079936B2Aug 3, 2021
3-D stacked memory with reconfigurable compute logic
SAMSUNG ELECTRONICS CO LTD12 citations84
US10977118B2Apr 13, 2021
DRAM assist error correction mechanism for DDR SDRAM interface
SAMSUNG ELECTRONICS CO LTD5 citations84
US10866900B2Dec 15, 2020
ISA extension for high-bandwidth memory
SAMSUNG ELECTRONICS CO LTD5 citations84
US10762000B2Sep 1, 2020
Techniques to reduce read-modify-write overhead in hybrid DRAM/NAND memory
SAMSUNG ELECTRONICS CO LTD7 citations84
US10437482B2Oct 8, 2019
Coordinated near-far memory controller for process-in-HBM
SAMSUNG ELECTRONICS CO LTD10 citations84
US10394648B2Aug 27, 2019
Method to deliver in-DRAM ECC information through DDR bus
SAMSUNG ELECTRONICS CO LTD4 citations84
US9846650B2Dec 19, 2017
Tail response time reduction method for SSD
SAMSUNG ELECTRONICS CO LTD7 citations84
US9830086B2Nov 28, 2017
Hybrid memory controller for arbitrating access to volatile and non-volatile memories in a hybrid memory group
SAMSUNG ELECTRONICS CO LTD6 citations84
US9983821B2May 29, 2018
Optimized hopscotch multiple hash tables for efficient memory in-line deduplication application
SAMSUNG ELECTRONICS CO LTD11 citations83
US10180906B2Jan 15, 2019
HBM with in-memory cache manager
SAMSUNG ELECTRONICS CO LTD18 citations81
US11625296B2Apr 11, 2023
DRAM assist error correction mechanism for DDR SDRAM interface
SAMSUNG ELECTRONICS CO LTD2 citations73
US11556476B2Jan 17, 2023
ISA extension for high-bandwidth memory
SAMSUNG ELECTRONICS CO LTD2 citations73
US11175853B2Nov 16, 2021
Systems and methods for write and flush support in hybrid memory
SAMSUNG ELECTRONICS CO LTD3 citations73
US11010242B2May 18, 2021
DRAM assist error correction mechanism for DDR SDRAM interface
SAMSUNG ELECTRONICS CO LTD2 citations73
US10908993B2Feb 2, 2021
Method to deliver in-DRAM ECC information through DDR bus
SAMSUNG ELECTRONICS CO LTD1 citations73
US10795764B2Oct 6, 2020
Method to deliver in-DRAM ECC information through DDR bus
SAMSUNG ELECTRONICS CO LTD1 citations73
US10592114B2Mar 17, 2020
Coordinated in-module RAS features for synchronous DDR compatible memory
SAMSUNG ELECTRONICS CO LTD2 citations73
US10347306B2Jul 9, 2019
Self-optimized power management for DDR-compatible memory systems
SAMSUNG ELECTRONICS CO LTD6 citations73
US10282294B2May 7, 2019
Mitigating DRAM cache metadata access overhead with SRAM metadata cache and bloom filter
SAMSUNG ELECTRONICS CO LTD6 citations73
US9837135B2Dec 5, 2017
Methods for addressing high capacity SDRAM-like memory without increasing pin cost
SAMSUNG ELECTRONICS CO LTD2 citations73
US10496543B2Dec 3, 2019
Virtual bucket multiple hash tables for efficient memory in-line deduplication application
SAMSUNG ELECTRONICS CO LTD3 citations72
US12248402B2Mar 11, 2025
Bandwidth boosted stacked memory
SAMSUNG ELECTRONICS CO LTD0 citations63
US11940922B2Mar 26, 2024
ISA extension for high-bandwidth memory
SAMSUNG ELECTRONICS CO LTD0 citations63
US11568920B2Jan 31, 2023
Dual row-column major dram
SAMSUNG ELECTRONICS CO LTD0 citations63
US11513965B2Nov 29, 2022
Bandwidth boosted stacked memory
SAMSUNG ELECTRONICS CO LTD0 citations63
US10915451B2Feb 9, 2021
Bandwidth boosted stacked memory
SAMSUNG ELECTRONICS CO LTD0 citations63
US12468445B2Nov 11, 2025
Coordinated in-module RAS features for synchronous DDR compatible memory
SAMSUNG ELECTRONICS CO LTD0 citations62
US12242344B2Mar 4, 2025
DRAM assist error correction mechanism for DDR SDRAM interface
SAMSUNG ELECTRONICS CO LTD0 citations62
US12189546B2Jan 7, 2025
Asynchronous communication protocol compatible with synchronous DDR protocol
SAMSUNG ELECTRONICS CO LTD0 citations62
US12032828B2Jul 9, 2024
Coordinated in-module RAS features for synchronous DDR compatible memory
SAMSUNG ELECTRONICS CO LTD0 citations62
US11397698B2Jul 26, 2022
Asynchronous communication protocol compatible with synchronous DDR protocol
SAMSUNG ELECTRONICS CO LTD0 citations62
US11294571B2Apr 5, 2022
Coordinated in-module RAS features for synchronous DDR compatible memory
SAMSUNG ELECTRONICS CO LTD0 citations62
US11029879B2Jun 8, 2021
Page size synchronization and page size aware scheduling method for non-volatile memory dual in-line memory module (NVDIMM) over memory channel
SAMSUNG ELECTRONICS CO LTD0 citations62
US10810144B2Oct 20, 2020
System and method for operating a DRR-compatible asynchronous memory module
SAMSUNG ELECTRONICS CO LTD1 citations62
US12197726B2Jan 14, 2025
3D-stacked memory with reconfigurable compute logic
SAMSUNG ELECTRONICS CO LTD0 citations61
US11789610B2Oct 17, 2023
3D-stacked memory with reconfigurable compute logic
SAMSUNG ELECTRONICS CO LTD0 citations61
US10318434B2Jun 11, 2019
Optimized hopscotch multiple hash tables for efficient memory in-line deduplication application
SAMSUNG ELECTRONICS CO LTD1 citations61
US10929026B2Feb 23, 2021
Multi-cell structure for non-volatile resistive memory
SAMSUNG ELECTRONICS CO LTD0 citations52
US10621119B2Apr 14, 2020
Asynchronous communication protocol compatible with synchronous DDR protocol
SAMSUNG ELECTRONICS CO LTD0 citations52
US10552256B2Feb 4, 2020
Morphable ECC encoder/decoder for NVDIMM over DDR channel
SAMSUNG ELECTRONICS CO LTD0 citations52
US10504572B2Dec 10, 2019
Methods for addressing high capacity SDRAM-like memory without increasing pin cost
SAMSUNG ELECTRONICS CO LTD0 citations52
US10394719B2Aug 27, 2019
Refresh aware replacement policy for volatile memory cache
SAMSUNG ELECTRONICS CO LTD0 citations52
US10114560B2Oct 30, 2018
Hybrid memory controller with command buffer for arbitrating access to volatile and non-volatile memories in a hybrid memory group
SAMSUNG ELECTRONICS CO LTD0 citations52
US10049717B2Aug 14, 2018
Wear leveling for storage or memory device
SAMSUNG ELECTRONICS CO LTD0 citations52
US9971511B2May 15, 2018
Hybrid memory module and transaction-based memory interface
SAMSUNG ELECTRONICS CO LTD1 citations52
US9904635B2Feb 27, 2018
High performance transaction-based memory systems
SAMSUNG ELECTRONICS CO LTD1 citations52
ZHENG HONGZHONG
1 patentNIU DIMIN
1 patentCHANG MU-TIEN
1 patentShowing the top 50 of 57 patents by PatentIndex Score.