P

Inventor

NIU DIMIN

US110 patents
⚠️ This page may combine multiple inventors who share the name “NIU DIMIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

42 patents
US10268541B2Apr 23, 2019

DRAM assist error correction mechanism for DDR SDRAM interface

SAMSUNG ELECTRONICS CO LTD18 citations94
US11100193B2Aug 24, 2021

Dataflow accelerator architecture for general matrix-matrix multiplication and tensor computation in deep learning

SAMSUNG ELECTRONICS CO LTD14 citations85
US11151006B2Oct 19, 2021

HBM RAS cache architecture

SAMSUNG ELECTRONICS CO LTD6 citations84
US11079936B2Aug 3, 2021

3-D stacked memory with reconfigurable compute logic

SAMSUNG ELECTRONICS CO LTD12 citations84
US10977118B2Apr 13, 2021

DRAM assist error correction mechanism for DDR SDRAM interface

SAMSUNG ELECTRONICS CO LTD5 citations84
US10866900B2Dec 15, 2020

ISA extension for high-bandwidth memory

SAMSUNG ELECTRONICS CO LTD5 citations84
US10762000B2Sep 1, 2020

Techniques to reduce read-modify-write overhead in hybrid DRAM/NAND memory

SAMSUNG ELECTRONICS CO LTD7 citations84
US10437482B2Oct 8, 2019

Coordinated near-far memory controller for process-in-HBM

SAMSUNG ELECTRONICS CO LTD10 citations84
US10394648B2Aug 27, 2019

Method to deliver in-DRAM ECC information through DDR bus

SAMSUNG ELECTRONICS CO LTD4 citations84
US9846650B2Dec 19, 2017

Tail response time reduction method for SSD

SAMSUNG ELECTRONICS CO LTD7 citations84
US9830086B2Nov 28, 2017

Hybrid memory controller for arbitrating access to volatile and non-volatile memories in a hybrid memory group

SAMSUNG ELECTRONICS CO LTD6 citations84
US9983821B2May 29, 2018

Optimized hopscotch multiple hash tables for efficient memory in-line deduplication application

SAMSUNG ELECTRONICS CO LTD11 citations83
US9922696B1Mar 20, 2018

Circuits and micro-architecture for a DRAM-based processing unit

SAMSUNG ELECTRONICS CO LTD9 citations82
US11625296B2Apr 11, 2023

DRAM assist error correction mechanism for DDR SDRAM interface

SAMSUNG ELECTRONICS CO LTD2 citations73
US11556476B2Jan 17, 2023

ISA extension for high-bandwidth memory

SAMSUNG ELECTRONICS CO LTD2 citations73
US11475102B2Oct 18, 2022

Adaptive matrix multiplication accelerator for machine learning and deep learning applications

SAMSUNG ELECTRONICS CO LTD1 citations73
US11175853B2Nov 16, 2021

Systems and methods for write and flush support in hybrid memory

SAMSUNG ELECTRONICS CO LTD3 citations73
US11048645B2Jun 29, 2021

Memory module, operation method therof, and operation method of host

SAMSUNG ELECTRONICS CO LTD2 citations73
US11010242B2May 18, 2021

DRAM assist error correction mechanism for DDR SDRAM interface

SAMSUNG ELECTRONICS CO LTD2 citations73
US10908993B2Feb 2, 2021

Method to deliver in-DRAM ECC information through DDR bus

SAMSUNG ELECTRONICS CO LTD1 citations73
US10795764B2Oct 6, 2020

Method to deliver in-DRAM ECC information through DDR bus

SAMSUNG ELECTRONICS CO LTD1 citations73
US10592114B2Mar 17, 2020

Coordinated in-module RAS features for synchronous DDR compatible memory

SAMSUNG ELECTRONICS CO LTD2 citations73
US10347306B2Jul 9, 2019

Self-optimized power management for DDR-compatible memory systems

SAMSUNG ELECTRONICS CO LTD6 citations73
US10282294B2May 7, 2019

Mitigating DRAM cache metadata access overhead with SRAM metadata cache and bloom filter

SAMSUNG ELECTRONICS CO LTD6 citations73
US10162554B2Dec 25, 2018

System and method for controlling a programmable deduplication ratio for a memory system

SAMSUNG ELECTRONICS CO LTD3 citations73
US9837135B2Dec 5, 2017

Methods for addressing high capacity SDRAM-like memory without increasing pin cost

SAMSUNG ELECTRONICS CO LTD2 citations73
US9785570B2Oct 10, 2017

Memory devices and modules

SAMSUNG ELECTRONICS CO LTD3 citations73
US10496543B2Dec 3, 2019

Virtual bucket multiple hash tables for efficient memory in-line deduplication application

SAMSUNG ELECTRONICS CO LTD3 citations72
US10242728B2Mar 26, 2019

DPU architecture

SAMSUNG ELECTRONICS CO LTD2 citations71
US10180808B2Jan 15, 2019

Software stack and programming for DPU operations

SAMSUNG ELECTRONICS CO LTD2 citations71
US9727239B2Aug 8, 2017

Electronic system with partitioning mechanism and method of operation thereof

SAMSUNG ELECTRONICS CO LTD3 citations71
US12411779B2Sep 9, 2025

High bandwidth memory system

SAMSUNG ELECTRONICS CO LTD0 citations63
US12248402B2Mar 11, 2025

Bandwidth boosted stacked memory

SAMSUNG ELECTRONICS CO LTD0 citations63
US11940922B2Mar 26, 2024

ISA extension for high-bandwidth memory

SAMSUNG ELECTRONICS CO LTD0 citations63
US11568920B2Jan 31, 2023

Dual row-column major dram

SAMSUNG ELECTRONICS CO LTD0 citations63
US11513965B2Nov 29, 2022

Bandwidth boosted stacked memory

SAMSUNG ELECTRONICS CO LTD0 citations63
US11436165B2Sep 6, 2022

High bandwidth memory system

SAMSUNG ELECTRONICS CO LTD0 citations63
US10915451B2Feb 9, 2021

Bandwidth boosted stacked memory

SAMSUNG ELECTRONICS CO LTD0 citations63
US12468445B2Nov 11, 2025

Coordinated in-module RAS features for synchronous DDR compatible memory

SAMSUNG ELECTRONICS CO LTD0 citations62
US12340101B2Jun 24, 2025

Scaling out architecture for dram-based processing unit (DPU)

SAMSUNG ELECTRONICS CO LTD0 citations62
US12242344B2Mar 4, 2025

DRAM assist error correction mechanism for DDR SDRAM interface

SAMSUNG ELECTRONICS CO LTD0 citations62
US12189546B2Jan 7, 2025

Asynchronous communication protocol compatible with synchronous DDR protocol

SAMSUNG ELECTRONICS CO LTD0 citations62

ALIBABA GROUP HOLDING LTD

3 patents

ALIBABA CHINA CO LTD

2 patents

ZHENG HONGZHONG

1 patent

ALIBABA DAMO HANGZHOU TECH CO LTD

1 patent

NIU DIMIN

1 patent

Showing the top 50 of 110 patents by PatentIndex Score.