Inventor
LIN MAN-HSUAN
TW6 patents
Patents
6 patentsUS10608078B2Mar 31, 2020
Bonded substrate for epitaxial growth and method of forming the same
GLOBALWAFERS CO LTD1 citations60
US11952676B2Apr 9, 2024
Silicon carbide crystal
GLOBALWAFERS CO LTD0 citations56
US10388518B2Aug 20, 2019
Epitaxial substrate and method of manufacturing the same
GLOBALWAFERS CO LTD0 citations49
US10446642B2Oct 15, 2019
Epitaxial substrate and method for forming the same
GLOBALWAFERS CO LTD0 citations48
US10438794B2Oct 8, 2019
Semiconductor device and method of forming the same
GLOBALWAFERS CO LTD0 citations48
US10851470B2Dec 1, 2020
Silicon carbide crystal and method for manufacturing the same
GLOBALWAFERS CO LTD0 citations46