Inventor
ZHU JIAN
US130 patents
⚠️ This page may combine multiple inventors who share the name “ZHU JIAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
11 patentsUS11417835B2Aug 16, 2022
Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM)
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10957851B2Mar 23, 2021
Magnetic layer for magnetic random access memory (MRAM) by moment enhancement
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10665773B2May 26, 2020
Nitride capping layer for spin torque transfer (STT)-magnetoresistive random access memory (MRAM)
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10522752B1Dec 31, 2019
Magnetic layer for magnetic random access memory (MRAM) by moment enhancement
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10763428B2Sep 1, 2020
Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10522744B2Dec 31, 2019
High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10431736B2Oct 1, 2019
Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10325639B2Jun 18, 2019
Initialization process for magnetic random access memory (MRAM) production
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10658577B2May 19, 2020
Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12167701B2Dec 10, 2024
Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11573270B2Feb 7, 2023
Electrical testing apparatus for spintronics devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
HEADWAY TECH INC
9 patentsUS9425387B1Aug 23, 2016
Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealing
HEADWAY TECH INC59 citations97
US10014465B1Jul 3, 2018
Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy
HEADWAY TECH INC22 citations94
US9842988B2Dec 12, 2017
Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications
HEADWAY TECH INC6 citations84
US9805816B2Oct 31, 2017
Implementation of a one time programmable memory using a MRAM stack design
HEADWAY TECH INC15 citations84
US9780299B2Oct 3, 2017
Multilayer structure for reducing film roughness in magnetic devices
HEADWAY TECH INC11 citations84
US10784310B2Sep 22, 2020
Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin torque transfer-magnetic random access memory) devices
HEADWAY TECH INC2 citations73
US10522747B2Dec 31, 2019
Fully compensated synthetic ferromagnet for spintronics applications
HEADWAY TECH INC3 citations73
US10230044B2Mar 12, 2019
Fully compensated synthetic ferromagnet for spintronics applications
HEADWAY TECH INC1 citations73
US10115892B2Oct 30, 2018
Multilayer structure for reducing film roughness in magnetic devices
HEADWAY TECH INC2 citations73
POLARIS WIRELESS INC
7 patentsUS10412699B1Sep 10, 2019
Enhancing an estimate of the location of a wireless terminal by using one or more types of identifiers of a wireless network
POLARIS WIRELESS INC4 citations83
US10367932B1Jul 30, 2019
Calibration of measurement bias of a barometric sensor in a wireless terminal
POLARIS WIRELESS INC12 citations83
US9432811B2Aug 30, 2016
Estimating the lateral location of a wireless terminal based on temperature and atmospheric pressure
POLARIS WIRELESS INC6 citations83
US11467291B2Oct 11, 2022
Estimation of barometric pressure measurement bias with adjustment based on a value expected for a wireless terminal
POLARIS WIRELESS INC2 citations73
US10863327B2Dec 8, 2020
Estimation of building floors based on difference in barometric pressure measured by wireless terminals
POLARIS WIRELESS INC2 citations73
US10517063B2Dec 24, 2019
Enhancing an estimate of the location of a wireless terminal by using one or more types of identifiers of a wireless network
POLARIS WIRELESS INC3 citations72
US10412211B1Sep 10, 2019
Calibration of measurement bias of a barometric sensor in a wireless terminal
POLARIS WIRELESS INC1 citations72
ZHU JIAN
4 patentsUS9510836B2Dec 6, 2016
Living tissue ligation device
ZHU JIAN11 citations83
USD984655SApr 25, 2023
Electronic muscle stimulator
ZHU JIAN4 citations74
US11435056B1Sep 6, 2022
Combination camp lantern and image projector
ZHU JIAN6 citations74
US9492176B2Nov 15, 2016
Clamping and ligation device
ZHU JIAN4 citations72
IND TECH RES INST
3 patentsOPPLE LIGHTING CO LTD
2 patentsHERE DATA TECH
2 patentsCOBURN CRAIG A
1 patentMERCK SHARP & DOHME
1 patentALI CORP
1 patentUNIV NORTHWESTERN
1 patentZHUHAI KINGSOFT OFFICE SOFTWARE CO LTD
1 patentGOERTEK INC
1 patentHGST Netherlands BV
1 patentDELTA ELECTRONICS SHANGHAI CO
1 patentHUAWEI TECH CO LTD
1 patentCHUSING TREVETT B
1 patentUNIV MICHIGAN REGENTS
1 patentSHENZHEN JINZHOU PRECISION TECH CORPORATION
1 patentShowing the top 50 of 130 patents by PatentIndex Score.