Inventor

WU CHENG-HSIEN

US161 patents

⚠️ This page may combine multiple inventors who share the name “WU CHENG-HSIEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WU CHENG-HSIEN

TAIWAN SEMICONDUCTOR MFG CO LTD

FinFETs with strained well regions

FinFETs with strained well regions

Multiple gate field-effect transistors having oxygen-scavenged gate stack

FinFET devices with unique fin shape and the fabrication thereof

Multi-gate device and method of fabrication thereof

Semiconductor device and manufacturing method thereof

Multi-gate semiconductor device and method for forming the same

Semiconductor device and manufacturing method thereof

FinFET device having a channel defined in a diamond-like shape semiconductor structure

Multi-gate device and method of fabrication thereof

Multi-gate device and method of fabrication thereof

Method of forming strained structures of semiconductor devices

Apparatus and method for FinFETs

Method of manufacturing a semiconductor device with multilayered channel structure

Semiconductor device and manufacturing method thereof

Source/drain profile for FinFET

Methods for forming semiconductor regions in trenches

Method of semiconductor arrangement formation

Semiconductor structures and methods with high mobility and high energy bandgap materials

FINFET device having a channel defined in a diamond-like shape semiconductor structure

Method for manufacturing semiconductor device including performing thermal treatment on germanium layer

Lattice-mismatched semiconductor substrates with defect reduction

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Method of manufacturing a semiconductor device with multilayered channel structure

Semiconductor device and method for manufacturing the same

Multi-gate device and method of fabrication thereof

Semiconductor device and manufacturing method thereof

WU CHENG-HSIEN

Semiconductor structures and methods with high mobility and high energy bandgap materials

Contact structure of semiconductor device

FinFET design and method of fabricating same

Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces

Method of forming CMOS FinFET device

Semiconductor device with enhanced strain

TAIWAN SEMICONDUCTOR MFG

FinFETs with strained well regions

CMOS FinFET device

Structure and method and FinFET device

Methods for forming semiconductor regions in trenches

FinFETs with strained well regions

Semiconductor structures and methods with high mobility and high energy bandgap materials

WANN CLEMENT HSINGJEN

Growing III-V compound semiconductors from trenches filled with intermediate layers

MOCVD for growing III-V compound semiconductors on silicon substrates

Epitaxial growth of III-V compound semiconductors on silicon surfaces

LEE YI-JING

Apparatus and method for FinFETs

FinFET having superlattice stressor

TWIST BIOSCIENCE CORP

Compositions and methods for synthetic gene assembly

Methods for seamless nucleic acid assembly

LIN YOU-RU

FinFET device having a channel defined in a diamond-like shape semiconductor structure

WAN CHENG-TIEN

Method for epitaxial re-growth of semiconductor region

MA TA-CHUN

Source/drain profile for FinFET