Inventor
PARK HYE-YOUNG
KR41 patents
⚠️ This page may combine multiple inventors who share the name “PARK HYE-YOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
13 patentsUS7943502B2May 17, 2011
Method of forming a phase change memory device
SAMSUNG ELECTRONICS CO LTD26 citations92
US7727884B2Jun 1, 2010
Methods of forming a semiconductor device including a phase change material layer
SAMSUNG ELECTRONICS CO LTD19 citations92
US8034683B2Oct 11, 2011
Method of forming a phase change material layer, method of forming a phase change memory device using the same, and a phase change memory device so formed
SAMSUNG ELECTRONICS CO LTD8 citations83
US7759667B2Jul 20, 2010
Phase change memory device including resistant material
SAMSUNG ELECTRONICS CO LTD17 citations83
US7838326B2Nov 23, 2010
Methods of fabricating semiconductor device including phase change layer
SAMSUNG ELECTRONICS CO LTD5 citations63
US7803654B2Sep 28, 2010
Variable resistance non-volatile memory cells and methods of fabricating same
SAMSUNG ELECTRONICS CO LTD6 citations63
US7867880B2Jan 11, 2011
Metal precursors for low temperature deposition and methods of forming a metal thin layer and manufacturing a phase-change memory device using the metal precursors
SAMSUNG ELECTRONICS CO LTD6 citations62
US8018021B2Sep 13, 2011
Schottky diode and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD6 citations61
US7705409B2Apr 27, 2010
High voltage transistors
SAMSUNG ELECTRONICS CO LTD5 citations60
US7600929B2Oct 13, 2009
Method and apparatus for controlling panning/tilting motor of monitoring camera
SAMSUNG ELECTRONICS CO LTD6 citations60
US7807497B2Oct 5, 2010
Phase-change material layers, methods of forming the same, phase-change memory devices having the same, and methods of forming phase-change memory devices
SAMSUNG ELECTRONICS CO LTD5 citations58
US8834968B2Sep 16, 2014
Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device
SAMSUNG ELECTRONICS CO LTD0 citations52
US7855145B2Dec 21, 2010
Gap filling method and method for forming semiconductor memory device using the same
SAMSUNG ELECTRONICS CO LTD0 citations41
SAMSUNG DISPLAY CO LTD
8 patentsUS10361312B2Jul 23, 2019
Thin film transistor substrate and display panel having the same
SAMSUNG DISPLAY CO LTD6 citations83
US10005263B2Jun 26, 2018
Display device and method of manufacturing a display device
SAMSUNG DISPLAY CO LTD5 citations73
US10971701B2Apr 6, 2021
Transparent display devices and methods of manufacturing transparent display devices
SAMSUNG DISPLAY CO LTD0 citations62
US10229953B2Mar 12, 2019
Substrate for transparent flexible display and organic light-emitting diode display including the same
SAMSUNG DISPLAY CO LTD1 citations62
US10510984B2Dec 17, 2019
Transparent display devices and methods of manufacturing transparent display devices
SAMSUNG DISPLAY CO LTD0 citations52
US10068923B2Sep 4, 2018
Transparent display device and method of manufacturing the same
SAMSUNG DISPLAY CO LTD0 citations52
US10672911B2Jun 2, 2020
Thin film transistor substrate and display panel having the same
SAMSUNG DISPLAY CO LTD0 citations51
US9647237B2May 9, 2017
Thin film transistor substrate and display panel having the same
SAMSUNG DISPLAY CO LTD0 citations51
UNIV NEW YORK STATE RES FOUND
4 patentsUS8343627B2Jan 1, 2013
Core-shell nanoparticles with multiple cores and a method for fabricating them
UNIV NEW YORK STATE RES FOUND22 citations92
US9327314B2May 3, 2016
Core-shell nanoparticles with multiple cores and a method for fabricating them
UNIV NEW YORK STATE RES FOUND6 citations84
US10191042B2Jan 29, 2019
Core-shell nanoparticles with multiple cores and method for fabricating them
UNIV NEW YORK STATE RES FOUND1 citations73
US10006908B2Jun 26, 2018
Core-shell nanoparticles with multiple cores and a method for fabricating them
UNIV NEW YORK STATE RES FOUND1 citations62
PARK HYE-YOUNG
3 patentsUS8634236B2Jan 21, 2014
Phase change memory device, storage system having the same and fabricating method thereof
PARK HYE-YOUNG15 citations81
US8703237B2Apr 22, 2014
Methods of forming a material layer and methods of fabricating a memory device
PARK HYE-YOUNG3 citations61
US8525244B2Sep 3, 2013
Germanium compound, semiconductor device fabricated using the same, and methods of forming the same
PARK HYE-YOUNG0 citations50
LS CABLE LTD
3 patentsUS7454109B2Nov 18, 2008
Optical fiber with zero dispersion wavelength shifted to short wavelength region, and optical transmission line and optical transmission system using the same
LS CABLE LTD1 citations49
US7340141B2Mar 4, 2008
Optical fiber, and optical transmission line and optical transmission system using the same
LS CABLE LTD1 citations49
US7289710B2Oct 30, 2007
Optical fiber suitable for high-speed large-scale wdm system, optical transmission line and optical transmission system using the same
LS CABLE LTD0 citations35
BAE BYOUNG-JAE
2 patentsUS8142846B2Mar 27, 2012
Method of forming phase change material layer using Ge(II) source, and method of fabrication phase change memory device
BAE BYOUNG-JAE4 citations61
US8852686B2Oct 7, 2014
Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device
BAE BYOUNG-JAE0 citations51