P

Inventor

PARK HYE-YOUNG

KR41 patents
⚠️ This page may combine multiple inventors who share the name “PARK HYE-YOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

13 patents
US7943502B2May 17, 2011

Method of forming a phase change memory device

SAMSUNG ELECTRONICS CO LTD26 citations92
US7727884B2Jun 1, 2010

Methods of forming a semiconductor device including a phase change material layer

SAMSUNG ELECTRONICS CO LTD19 citations92
US8034683B2Oct 11, 2011

Method of forming a phase change material layer, method of forming a phase change memory device using the same, and a phase change memory device so formed

SAMSUNG ELECTRONICS CO LTD8 citations83
US7759667B2Jul 20, 2010

Phase change memory device including resistant material

SAMSUNG ELECTRONICS CO LTD17 citations83
US7838326B2Nov 23, 2010

Methods of fabricating semiconductor device including phase change layer

SAMSUNG ELECTRONICS CO LTD5 citations63
US7803654B2Sep 28, 2010

Variable resistance non-volatile memory cells and methods of fabricating same

SAMSUNG ELECTRONICS CO LTD6 citations63
US7867880B2Jan 11, 2011

Metal precursors for low temperature deposition and methods of forming a metal thin layer and manufacturing a phase-change memory device using the metal precursors

SAMSUNG ELECTRONICS CO LTD6 citations62
US8018021B2Sep 13, 2011

Schottky diode and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD6 citations61
US7705409B2Apr 27, 2010

High voltage transistors

SAMSUNG ELECTRONICS CO LTD5 citations60
US7600929B2Oct 13, 2009

Method and apparatus for controlling panning/tilting motor of monitoring camera

SAMSUNG ELECTRONICS CO LTD6 citations60
US7807497B2Oct 5, 2010

Phase-change material layers, methods of forming the same, phase-change memory devices having the same, and methods of forming phase-change memory devices

SAMSUNG ELECTRONICS CO LTD5 citations58
US8834968B2Sep 16, 2014

Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device

SAMSUNG ELECTRONICS CO LTD0 citations52
US7855145B2Dec 21, 2010

Gap filling method and method for forming semiconductor memory device using the same

SAMSUNG ELECTRONICS CO LTD0 citations41

SAMSUNG DISPLAY CO LTD

8 patents

UNIV NEW YORK STATE RES FOUND

4 patents

PARK HYE-YOUNG

3 patents

LS CABLE LTD

3 patents

BAE BYOUNG-JAE

2 patents

LG CABLE LTD

1 patent

PARK YOUNG-LIM

1 patent

JO SUNG-CHAN

1 patent

OH JIN-HO

1 patent

MOGAM INST BIOMEDICAL RES

1 patent

AMAZON TECH INC

1 patent

NAM JUNG-SOO

1 patent

HAN GWI JUNG

1 patent