Inventor
FANG HAO
CN117 patents
⚠️ This page may combine multiple inventors who share the name “FANG HAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
34 patentsUS6175522B1Jan 16, 2001
Read operation scheme for a high-density, low voltage, and superior reliability nand flash memory device
ADVANCED MICRO DEVICES INC195 citations99
US5991202ANov 23, 1999
Method for reducing program disturb during self-boosting in a NAND flash memory
ADVANCED MICRO DEVICES INC334 citations99
US5617357AApr 1, 1997
Flash EEPROM memory with improved discharge speed using substrate bias and method therefor
ADVANCED MICRO DEVICES INC107 citations98
US5491657AFeb 13, 1996
Method for bulk (or byte) charging and discharging an array of flash EEPROM memory cells
ADVANCED MICRO DEVICES INC137 citations98
US5600578AFeb 4, 1997
Test method for predicting hot-carrier induced leakage over time in short-channel IGFETs and products designed in accordance with test results
ADVANCED MICRO DEVICES INC103 citations97
US6667511B1Dec 23, 2003
NAND type core cell structure for a high density flash memory device having a unique select gate transistor configuration
ADVANCED MICRO DEVICES INC45 citations96
US6023085AFeb 8, 2000
Core cell structure and corresponding process for NAND-type high performance flash memory device
ADVANCED MICRO DEVICES INC57 citations96
US5606518AFeb 25, 1997
Test method for predicting hot-carrier induced leakage over time in short-channel IGFETS and products designed in accordance with test results
ADVANCED MICRO DEVICES INC56 citations96
US6235586B1May 22, 2001
Thin floating gate and conductive select gate in situ doped amorphous silicon material for NAND type flash memory device applications
ADVANCED MICRO DEVICES INC59 citations95
US6218689B1Apr 17, 2001
Method for providing a dopant level for polysilicon for flash memory devices
ADVANCED MICRO DEVICES INC64 citations95
US6514830B1Feb 4, 2003
Method of manufacturing high voltage transistor with modified field implant mask
ADVANCED MICRO DEVICES INC43 citations93
US6316293B1Nov 13, 2001
Method of forming a nand-type flash memory device having a non-stacked gate transistor structure
ADVANCED MICRO DEVICES INC37 citations93
US6159795ADec 12, 2000
Low voltage junction and high voltage junction optimization for flash memory
ADVANCED MICRO DEVICES INC36 citations93
US6057193AMay 2, 2000
Elimination of poly cap for easy poly1 contact for NAND product
ADVANCED MICRO DEVICES INC36 citations93
US5708588AJan 13, 1998
Flash EEPROM memory with improved discharged speed using substrate bias and method therefor
ADVANCED MICRO DEVICES INC21 citations93
US5661059AAug 26, 1997
Boron penetration to suppress short channel effect in P-channel device
ADVANCED MICRO DEVICES INC42 citations93
US5457336AOct 10, 1995
Non-volatile memory structure including protection and structure for maintaining threshold stability
ADVANCED MICRO DEVICES INC47 citations93
US6133746AOct 17, 2000
Method for determining a reliable oxide thickness
ADVANCED MICRO DEVICES INC20 citations92
US6362049B1Mar 26, 2002
High yield performance semiconductor process flow for NAND flash memory products
ADVANCED MICRO DEVICES INC27 citations89
US6143608ANov 7, 2000
Barrier layer decreases nitrogen contamination of peripheral gate regions during tunnel oxide nitridation
ADVANCED MICRO DEVICES INC39 citations89
US6228782B1May 8, 2001
Core field isolation for a NAND flash memory
ADVANCED MICRO DEVICES INC19 citations88
US6072191AJun 6, 2000
Interlevel dielectric thickness monitor for complex semiconductor chips
ADVANCED MICRO DEVICES INC15 citations81
US6815292B1Nov 9, 2004
Flash memory having improved core field isolation in select gate regions
ADVANCED MICRO DEVICES INC11 citations74
US6638358B1Oct 28, 2003
Method and system for processing a semiconductor device
ADVANCED MICRO DEVICES INC10 citations74
US6436778B1Aug 20, 2002
Re-oxidation approach to improve peripheral gate oxide integrity in a tunnel nitride oxidation process
ADVANCED MICRO DEVICES INC12 citations74
US6376309B2Apr 23, 2002
Method for reduced gate aspect ratio to improve gap-fill after spacer etch
ADVANCED MICRO DEVICES INC6 citations74
US6372577B1Apr 16, 2002
Core cell structure and corresponding process for NAND type performance flash memory device
ADVANCED MICRO DEVICES INC10 citations74
US6346737B1Feb 12, 2002
Shallow trench isolation process particularly suited for high voltage circuits
ADVANCED MICRO DEVICES INC10 citations74
US6211058B1Apr 3, 2001
Semiconductor device with multiple contact sizes
ADVANCED MICRO DEVICES INC10 citations74
US6143612ANov 7, 2000
High voltage transistor with high gated diode breakdown, low body effect and low leakage
ADVANCED MICRO DEVICES INC9 citations74
US5994780ANov 30, 1999
Semiconductor device with multiple contact sizes
ADVANCED MICRO DEVICES INC6 citations74
US5978272ANov 2, 1999
Nonvolatile memory structure for programmable logic devices
ADVANCED MICRO DEVICES INC15 citations74
US6429479B1Aug 6, 2002
Nand flash memory with specified gate oxide thickness
ADVANCED MICRO DEVICES INC9 citations73
US6166951ADec 26, 2000
Multi state sensing of NAND memory cells by applying reverse-bias voltage
ADVANCED MICRO DEVICES INC14 citations73
SANDISK CORP
3 patentsUS7436703B2Oct 14, 2008
Active boosting to minimize capacitive coupling effect between adjacent gates of flash memory devices
SANDISK CORP21 citations92
US7362615B2Apr 22, 2008
Methods for active boosting to minimize capacitive coupling effect between adjacent gates of flash memory devices
SANDISK CORP25 citations92
US7221008B2May 22, 2007
Bitline direction shielding to avoid cross coupling between adjacent cells for NAND flash memory
SANDISK CORP11 citations84
MARVELL ASIA PTE LTD
3 patentsUS11270723B2Mar 8, 2022
Pulse-based writing for magnetic storage media
MARVELL ASIA PTE LTD6 citations86
US10984822B2Apr 20, 2021
Pulse-based writing for magnetic storage media
MARVELL ASIA PTE LTD10 citations86
US11557316B2Jan 17, 2023
Pulse-based writing for magnetic storage media
MARVELL ASIA PTE LTD1 citations73
AGERE SYSTEMS INC
3 patentsUS7692887B2Apr 6, 2010
Method and apparatus for measuring resistance of a resistive sensor
AGERE SYSTEMS INC13 citations83
US7106536B2Sep 12, 2006
Write head demagnetizer
AGERE SYSTEMS INC16 citations82
US7116174B2Oct 3, 2006
Base current compensation circuit for a bipolar junction transistor
AGERE SYSTEMS INC7 citations71
GOOGLE INC
2 patentsSEAGATE TECHNOLOGY LLC
1 patentMICROSOFT TECHNOLOGY LICENSING LLC
1 patentWANG BINGHE
1 patentMARVELL WORLD TRADE LTD
1 patentUNIV SOOCHOW
1 patentShowing the top 50 of 117 patents by PatentIndex Score.