P

Inventor

FANG HAO

CN117 patents
⚠️ This page may combine multiple inventors who share the name “FANG HAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ADVANCED MICRO DEVICES INC

34 patents
US6175522B1Jan 16, 2001

Read operation scheme for a high-density, low voltage, and superior reliability nand flash memory device

ADVANCED MICRO DEVICES INC195 citations99
US5991202ANov 23, 1999

Method for reducing program disturb during self-boosting in a NAND flash memory

ADVANCED MICRO DEVICES INC334 citations99
US5617357AApr 1, 1997

Flash EEPROM memory with improved discharge speed using substrate bias and method therefor

ADVANCED MICRO DEVICES INC107 citations98
US5491657AFeb 13, 1996

Method for bulk (or byte) charging and discharging an array of flash EEPROM memory cells

ADVANCED MICRO DEVICES INC137 citations98
US5600578AFeb 4, 1997

Test method for predicting hot-carrier induced leakage over time in short-channel IGFETs and products designed in accordance with test results

ADVANCED MICRO DEVICES INC103 citations97
US6667511B1Dec 23, 2003

NAND type core cell structure for a high density flash memory device having a unique select gate transistor configuration

ADVANCED MICRO DEVICES INC45 citations96
US6023085AFeb 8, 2000

Core cell structure and corresponding process for NAND-type high performance flash memory device

ADVANCED MICRO DEVICES INC57 citations96
US5606518AFeb 25, 1997

Test method for predicting hot-carrier induced leakage over time in short-channel IGFETS and products designed in accordance with test results

ADVANCED MICRO DEVICES INC56 citations96
US6235586B1May 22, 2001

Thin floating gate and conductive select gate in situ doped amorphous silicon material for NAND type flash memory device applications

ADVANCED MICRO DEVICES INC59 citations95
US6218689B1Apr 17, 2001

Method for providing a dopant level for polysilicon for flash memory devices

ADVANCED MICRO DEVICES INC64 citations95
US6514830B1Feb 4, 2003

Method of manufacturing high voltage transistor with modified field implant mask

ADVANCED MICRO DEVICES INC43 citations93
US6316293B1Nov 13, 2001

Method of forming a nand-type flash memory device having a non-stacked gate transistor structure

ADVANCED MICRO DEVICES INC37 citations93
US6159795ADec 12, 2000

Low voltage junction and high voltage junction optimization for flash memory

ADVANCED MICRO DEVICES INC36 citations93
US6057193AMay 2, 2000

Elimination of poly cap for easy poly1 contact for NAND product

ADVANCED MICRO DEVICES INC36 citations93
US5708588AJan 13, 1998

Flash EEPROM memory with improved discharged speed using substrate bias and method therefor

ADVANCED MICRO DEVICES INC21 citations93
US5661059AAug 26, 1997

Boron penetration to suppress short channel effect in P-channel device

ADVANCED MICRO DEVICES INC42 citations93
US5457336AOct 10, 1995

Non-volatile memory structure including protection and structure for maintaining threshold stability

ADVANCED MICRO DEVICES INC47 citations93
US6133746AOct 17, 2000

Method for determining a reliable oxide thickness

ADVANCED MICRO DEVICES INC20 citations92
US6362049B1Mar 26, 2002

High yield performance semiconductor process flow for NAND flash memory products

ADVANCED MICRO DEVICES INC27 citations89
US6143608ANov 7, 2000

Barrier layer decreases nitrogen contamination of peripheral gate regions during tunnel oxide nitridation

ADVANCED MICRO DEVICES INC39 citations89
US6228782B1May 8, 2001

Core field isolation for a NAND flash memory

ADVANCED MICRO DEVICES INC19 citations88
US6072191AJun 6, 2000

Interlevel dielectric thickness monitor for complex semiconductor chips

ADVANCED MICRO DEVICES INC15 citations81
US6815292B1Nov 9, 2004

Flash memory having improved core field isolation in select gate regions

ADVANCED MICRO DEVICES INC11 citations74
US6638358B1Oct 28, 2003

Method and system for processing a semiconductor device

ADVANCED MICRO DEVICES INC10 citations74
US6436778B1Aug 20, 2002

Re-oxidation approach to improve peripheral gate oxide integrity in a tunnel nitride oxidation process

ADVANCED MICRO DEVICES INC12 citations74
US6376309B2Apr 23, 2002

Method for reduced gate aspect ratio to improve gap-fill after spacer etch

ADVANCED MICRO DEVICES INC6 citations74
US6372577B1Apr 16, 2002

Core cell structure and corresponding process for NAND type performance flash memory device

ADVANCED MICRO DEVICES INC10 citations74
US6346737B1Feb 12, 2002

Shallow trench isolation process particularly suited for high voltage circuits

ADVANCED MICRO DEVICES INC10 citations74
US6211058B1Apr 3, 2001

Semiconductor device with multiple contact sizes

ADVANCED MICRO DEVICES INC10 citations74
US6143612ANov 7, 2000

High voltage transistor with high gated diode breakdown, low body effect and low leakage

ADVANCED MICRO DEVICES INC9 citations74
US5994780ANov 30, 1999

Semiconductor device with multiple contact sizes

ADVANCED MICRO DEVICES INC6 citations74
US5978272ANov 2, 1999

Nonvolatile memory structure for programmable logic devices

ADVANCED MICRO DEVICES INC15 citations74
US6429479B1Aug 6, 2002

Nand flash memory with specified gate oxide thickness

ADVANCED MICRO DEVICES INC9 citations73
US6166951ADec 26, 2000

Multi state sensing of NAND memory cells by applying reverse-bias voltage

ADVANCED MICRO DEVICES INC14 citations73

SANDISK CORP

3 patents

MARVELL ASIA PTE LTD

3 patents

AGERE SYSTEMS INC

3 patents

GOOGLE INC

2 patents

SEAGATE TECHNOLOGY LLC

1 patent

MICROSOFT TECHNOLOGY LICENSING LLC

1 patent

WANG BINGHE

1 patent

MARVELL WORLD TRADE LTD

1 patent

UNIV SOOCHOW

1 patent

Showing the top 50 of 117 patents by PatentIndex Score.