Inventor
GEE HARRY YUE
US21 patents
⚠️ This page may combine multiple inventors who share the name “GEE HARRY YUE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CROSSBAR INC
16 patentsUS9595670B1Mar 14, 2017
Resistive random access memory (RRAM) cell and method for forming the RRAM cell
CROSSBAR INC25 citations93
US9166163B2Oct 20, 2015
Sub-oxide interface layer for two-terminal memory
CROSSBAR INC23 citations92
US9741765B1Aug 22, 2017
Monolithically integrated resistive memory using integrated-circuit foundry compatible processes
CROSSBAR INC16 citations91
US10453896B1Oct 22, 2019
4F2 resistive non-volatile memory formed in a NAND architecture
CROSSBAR INC12 citations84
US9685483B2Jun 20, 2017
Selector-based non-volatile cell fabrication utilizing IC-foundry compatible process
CROSSBAR INC13 citations84
US9583701B1Feb 28, 2017
Methods for fabricating resistive memory device switching material using ion implantation
CROSSBAR INC16 citations83
US9425046B1Aug 23, 2016
Method for surface roughness reduction after silicon germanium thin film deposition
CROSSBAR INC7 citations83
US10319908B2Jun 11, 2019
Integrative resistive memory in backend metal layers
CROSSBAR INC9 citations82
US10847579B1Nov 24, 2020
Method for fabricating an array of 4F2 resistive non-volatile memory in a NAND architecture
CROSSBAR INC2 citations73
US10062845B1Aug 28, 2018
Flatness of memory cell surfaces
CROSSBAR INC6 citations72
US10290801B2May 14, 2019
Scalable silicon based resistive memory device
CROSSBAR INC6 citations71
US9437814B1Sep 6, 2016
Mitigating damage from a chemical mechanical planarization process
CROSSBAR INC5 citations69
US9698201B2Jul 4, 2017
High density selector-based non volatile memory cell and fabrication
CROSSBAR INC1 citations52
US10096653B2Oct 9, 2018
Monolithically integrated resistive memory using integrated-circuit foundry compatible processes
CROSSBAR INC1 citations51
US9601690B1Mar 21, 2017
Sub-oxide interface layer for two-terminal memory
CROSSBAR INC1 citations51
US10115819B2Oct 30, 2018
Recessed high voltage metal oxide semiconductor transistor for RRAM cell
CROSSBAR INC0 citations41