Inventor
FISCHER BJOERN
DE14 patents
⚠️ This page may combine multiple inventors who share the name “FISCHER BJOERN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AUSTRIA AG
8 patentsUS10468479B2Nov 5, 2019
VDMOS having a drift zone with a compensation structure
INFINEON TECHNOLOGIES AUSTRIA AG2 citations73
US10811529B2Oct 20, 2020
Transistor device with gate resistor
INFINEON TECHNOLOGIES AUSTRIA AG5 citations72
US11201236B2Dec 14, 2021
Semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG2 citations71
US10374056B2Aug 6, 2019
Latch-up resistant transistor
INFINEON TECHNOLOGIES AUSTRIA AG2 citations69
US10475880B2Nov 12, 2019
Transistor device with high avalanche robustness
INFINEON TECHNOLOGIES AUSTRIA AG2 citations67
US12119376B2Oct 15, 2024
Power semiconductor device having vertically parallel p-n layers formed in an active region under transistor cells and under a non-depletable extension zone formed in the edge region
INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US10943987B2Mar 9, 2021
Latch-up resistant transistor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations58
US10950691B2Mar 16, 2021
Power converter circuit having a controller for generating a drive signal for driving an electronic switch with high avalanche robustness
INFINEON TECHNOLOGIES AUSTRIA AG0 citations56
INFINEON TECHNOLOGIES AG
4 patentsUS6797562B2Sep 28, 2004
Method for manufacturing a buried strap contact in a memory cell
INFINEON TECHNOLOGIES AG7 citations73
US7183156B2Feb 27, 2007
Transistor structure, memory cell, DRAM, and method for fabricating a transistor structure in a semiconductor substrate
INFINEON TECHNOLOGIES AG9 citations72
US7045855B2May 16, 2006
Semiconductor device and corresponding fabrication method
INFINEON TECHNOLOGIES AG4 citations62
US7009263B2Mar 7, 2006
Field-effect transistor
INFINEON TECHNOLOGIES AG6 citations62