Inventor
MITAN MARTIN M
US7 patents
Patents
7 patentsUS10971600B2Apr 6, 2021
Selective gate spacers for semiconductor devices
INTEL CORP1 citations72
US10720508B2Jul 21, 2020
Fabrication of multi-channel nanowire devices with self-aligned internal spacers and SOI FinFETs using selective silicon nitride capping
INTEL CORP3 citations72
US10396176B2Aug 27, 2019
Selective gate spacers for semiconductor devices
INTEL CORP3 citations72
US11869889B2Jan 9, 2024
Self-aligned gate endcap (SAGE) architectures without fin end gap
INTEL CORP4 citations71
US11532724B2Dec 20, 2022
Selective gate spacers for semiconductor devices
INTEL CORP0 citations62
US10998423B2May 4, 2021
Fabrication of multi-channel nanowire devices with self-aligned internal spacers and SOI FinFETs using selective silicon nitride capping
INTEL CORP0 citations62
US11810980B2Nov 7, 2023
Channel formation for three dimensional transistors
INTEL CORP0 citations61